Multiple Gate Oxide Analog Circuit Architecture With Multiple Voltage Supplies and Associated Method

Abstract

An analog circuit architecture with dual gate oxides and dual voltage supplies and associated method is provided. In the analog circuit architecture, different kinds of devices/transistors with different gate oxide thicknesses are powered by different voltages, such that advantages of each device technology are mixed to enhance total performance of the analog circuit. For example, thin gate oxide 0.18 um transistors are powered by 1.8V for high speed and low power consumption, whereas thick gate oxide 0.35 um transistors are powered by 3.3V for a wider signal swing range.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit of U.S. Provisional Application No. 60 / 597,390, filed Nov. 29, 2005, and is included herein by reference.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to integrated circuit architectures, and particularly, to an analog integrated circuit fabrication architecture with multiple gate oxide thicknesses and multiple power voltages, and associated method. [0004] 2. Description of the Prior Art [0005] In a modern information society, electronics are used to process, transmit, and receive all kinds of audio and video media. Thus, research in electronics has focused on all kinds of circuits and architectures for processing multimedia electronic signals. Typically, signal processing circuits are categorized by digital circuits and analog circuits. Though the development of new digital circuits is rapid, the importance of analog circuits (including mixed-signal...

AI Technical Summary

Benefits of technology

[0010] The present invention discloses a multiple power, multi-gate-oxide analog circuit architecture. The architecture comprises a plurality of first devices powered by a first voltage, and a plurality of second devices powered by a second voltage, the second voltage substantially different from the first voltage. For example, the first devices are thin-gate-oxide transistors, such as 0.18 um devices, and the first voltage is a low voltage, such as 1.8V. The seco

Problems solved by technology

Of course, a critical limiting factor in achieving large signal swing analog circuits is a power voltage of the analog circuit.

However, thick-gate-oxide devices have disadvantages when used in analog circuits.

Thick-gate-oxide devices are slow, occupy a larger area, and consume more power.

Although the circuit architecture of FIG. 1 attempts to introduce the few thin-gate-oxide devices, as noted, the thin-gate-oxide transistors can only be applied in low power voltage environments.

For example, a gate oxide layer of the thin-gate-oxide transistors is thinner, and cannot withstand large signals in a high power voltage environ

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