The application discloses a kind of based on double
light activation layer's super-sensitivity phototransistor.The phototransistor described in the application is sequentially composed of gate
electrode (Si),
dielectric layer (HfO2), photoactive
ion layer (PbI2), channel (WSe2) and source-drain
electrode (Au) from bottom to top.The phototransistor described in the application exhibits extremely high sensitivity
advantage: on the one hand, it meets the test demand in extremely weak light environment, and the dark field
light intensity detected by it is lower than that of commercial phototransistor by 4 orders of magnitude;On the other hand, its
responsivity is higher than that of commercial product by 4 orders of magnitude.PbI2, a photoactive
ion layer, is introduced into the traditional phototransistor
structure based on traditional two-dimensional material for the first time, which greatly improves the sensitivity of the device and provides a new idea for the development of extremely dark
field detection technology.