The invention provides a photoetching patterning method. The photoetching patterning method comprises the following steps: S1, forming a packaging material layer on the surface of a
single crystal perovskite device; s2, spin-
coating a layer of negative
photoresist on the packaging material layer to form a target pattern; s3,
etching and
thinning the target pattern area on the packaging material layer; s4, removing the negative
photoresist spin-coated in the step S2, and spin-
coating a layer of negative
photoresist again to form an intermediate pattern; s5,
etching and
thinning the middle pattern area on the packaging material layer until the surface of the
single crystal perovskite device corresponding to the target pattern is exposed, and forming a hole structure with a T-shaped longitudinal section on the packaging material layer; s6, depositing a
metal material in the pore structure to form a T-shaped barrier structure; and S7, soaking the single-
crystal perovskite device in a stripping
solvent, and removing the negative photoresist to complete photoetching patterning of the single-
crystal perovskite device. According to the invention, the problem that a perovskite material is damaged due to
solvent permeation caused by long-time
solvent soaking in a
single crystal perovskite photoetching patterning process is solved.