The invention provides a quasi-super junction planar gate
silicon carbide VDMOS and a preparation method thereof, and the method comprises the steps: depositing
metal on the lower side surface of a
silicon carbide substrate, and forming a drain
metal layer; performing epitaxial growth on the upper side surface of the
silicon carbide substrate to form a drift layer; forming a
barrier layer,
etching, performing
ion implantation, forming a plurality of N-type
body regions and a plurality of
diffusion regions, and forming a P-type well region, an N-type source region and a
current sharing layer; re-forming a
barrier layer,
etching the
barrier layer to form a through hole, and depositing to form a
gate dielectric layer; a barrier layer is formed again, the barrier layer is etched to form a through hole,
metal is deposited, and a gate metal layer is formed; the preparation method comprises the following steps of: re-forming a barrier layer,
etching the barrier layer to form a through hole, depositing metal, forming a source metal layer, removing the barrier layer, and completing preparation, so that a quasi-super junction structure and a
current sharing layer are constructed in the device, and the
voltage endurance capability, the gate reliability and the conduction capability of the device can be effectively improved.