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Stripping method

A metal layer, substrate technology, used in instruments, optomechanical equipment, optics, etc.

Inactive Publication Date: 2010-06-16
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This control can only be done by adjusting the etch process after making devices with metal residues or significantly changed critical dimensions

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] It is expected that the stripping composition recorded in the table below can effectively remove resist and metal layer residues after etching.

[0050] sample

Embodiment 2

[0052] An optical substrate of borosilicate glass is provided, which has a metal layer composed of a molybdenum barrier layer on the glass and a copper main layer on the barrier layer. A liquid photoresist is applied to the metal layer, and the photoresist is exposed to actinic radiation of a suitable wavelength through a mask to form a pattern, and then the exposed photoresist is developed. The exposed area of ​​the metal layer is formed after the patterning step. Next, the metal layer and 1% by weight of the etching composition containing peracetic acid are contacted at 25° C. for 2-3 minutes to remove a part of the exposed metal layer. It is expected to remove all the copper body layer and all but approximately 5nm of the barrier layer (all but approximately 5nm of the barrier layer). Then, the substrate was washed with deionized water for 2 minutes. Next, the remaining exposed metal layer was immersed in the sample 15 of Example 1 at 70-90°C for 1 minute. After that, the...

Embodiment 3

[0054] Except that sample 15 is replaced with sample 3, sample 4, sample 9, sample 10, sample 11, and sample 12, the steps of Example 2 are repeated several times. Results similar to Example 2 were obtained each time.

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PUM

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Abstract

Methods are provided for manufacturing optical display devices which remove an etch resist and residual post-etch metal in a single step. These methods are particularly useful in the manufacture of LCDs.

Description

Technical field [0001] The invention relates to the field of removing polymer and metal materials from substrates. Specifically, the present invention relates to a method for removing residues remaining after etching a metal layer in the process of manufacturing a display device. technical background [0002] In the process of manufacturing the display device, the metal layer is placed on the transparent substrate. Generally, such metal layers are patterned to provide metal lines (or circuit traces). One way to form such metal lines is to etch away unnecessary parts of the metal layer. This etching method usually includes applying a suitable resist layer to the metal layer to form a certain pattern in the resist. This can easily be done by using photoresist as the resist. The photoresist is exposed to actinic radiation having a suitable wavelength through a mask, and then the photoresist is developed to form a certain pattern on the photoresist. Remove unwanted portions of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/02C23F1/14G03F7/00H01L21/3213H01L21/70
CPCC23F1/14C23G1/24G03F7/00H01L21/302
Inventor L·A·戈麦司J·A·利斯
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC