Metal gate structure, semiconductor device and manufacturing method thereof

Abstract

Provided are a metal gate structure and related methods including implementing a metal gate cutting process. The metal gate cutting process includes multiple etching steps. For example, first anisotropic dry etching is performed, second isotropic dry etching is performed, and third wet etching is performed. In some embodiments, the second isotropic etch removes remaining portions of the metal gate layer including the metal-containing layer. In some embodiments, the third etch removes remaining portions of the dielectric layer. The invention also provides a semiconductor device and a manufacturing method thereof.

Description

technical field [0001] Embodiments of the present invention generally relate to the technical field of semiconductors, and more particularly, to semiconductor devices and manufacturing methods thereof. Background technique [0002] The electronics industry has experienced an ever-increasing demand for smaller and faster electronic devices capable of simultaneously supporting more increasingly complex and sophisticated functions. Accordingly, there is a continuing trend in the semiconductor industry to manufacture integrated circuits (ICs) that are low cost, high performance, and low power consumption. To date, these goals have been largely achieved by scaling down semiconductor IC dimensions (eg, minimum feature size), thereby increasing production efficiency and reducing associated costs. However, this scaling down also creates an increased complexity of the semiconductor manufacturing process. Accordingly, achieving continued advances in semiconductor ICs and devices req...

AI Technical Summary

Problems solved by technology

In some cases, the metal gate wire cutting process may result in loss of portions of the interlayer dielectric (ILD), undesired residues of metal layers and / or include other issues that may lead to reduced device reliability

[0004] Therefore, the prior art has not proven to be completely satisfactory in all respects

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