Unlock instant, AI-driven research and patent intelligence for your innovation.

Stripping method

A metal layer, substrate technology, used in instruments, optomechanical equipment, optics, etc.

Inactive Publication Date: 2008-03-12
ROHM & HAAS ELECTRONICS MATERIALS LLC
View PDF3 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This control can only be done by adjusting the etch process after making devices with metal residues or significantly changed critical dimensions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The stripping compositions reported in the table below are expected to be effective in removing resist and post-etch metal layer residues.

[0050] sample

[0051] 8

Embodiment 2

[0053] An optical substrate of borosilicate glass having a metal layer consisting of said molybdenum barrier layer on glass and a copper host layer on said barrier layer is provided. A liquid photoresist is applied to the metal layer and patterned by exposing the photoresist to actinic radiation of the appropriate wavelength through a mask and then developing the exposed photoresist. The exposed regions of the metal layer are formed after the patterning step. Next, a portion of the exposed metal layer was removed by contacting the metal layer with 1% by weight of an etching composition comprising peracetic acid for 2-3 minutes at 25°C. It is expected that all copper bulk layer and all but approximately 5nm of the barrier layer are removed. Then, the substrate was rinsed with deionized water for 2 minutes. Next, the remaining exposed metal layer was immersed in sample 15 of Example 1 at 70-90°C for 1 minute. Afterwards, the substrate was rinsed with deionized water for 2 min...

Embodiment 3

[0055] The procedure of Example 2 was repeated several times except that sample 15 was replaced by sample 3, sample 4, sample 9, sample 10, sample 11 and sample 12, respectively. All obtain and embodiment 2 similar result every time.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Methods are provided for manufacturing optical display devices which remove an etch resist and residual post-etch metal in a single step. These methods are particularly useful in the manufacture of LCDs.

Description

technical field [0001] This invention relates to the field of removal of polymeric and metallic materials from substrates. In particular, the present invention relates to a method for removing residues remaining after etching a metal layer during the manufacture of a display device. technical background [0002] During the manufacture of display devices, the metal layer is placed on the light-transmitting substrate. Typically, this metal layer is patterned to provide metal lines (or circuit traces). One way to form such metal lines is to etch away unwanted portions of the metal layer. This etching method generally involves applying a suitable resist layer to the metal layer, forming a pattern in the resist. This can easily be done by using photoresist as the resist. The photoresist is patterned by exposing the photoresist through a mask to actinic radiation of the appropriate wavelength, followed by developing the photoresist. Unwanted portions of the photoresist are re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/02C23F1/14G03F7/00H01L21/3213H01L21/70
CPCC23F1/14C23G1/24G03F7/00H01L21/302
Inventor L·A·戈麦司J·A·利斯
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC