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Semiconductor device and method for manufacturing the same

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of small semiconductor devices and channel length limitations

Inactive Publication Date: 2011-08-24
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, as semiconductor devices become smaller and smaller, there is a limit in increasing the channel length of the gate 70 using the recessed region 60

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

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Embodiment Construction

[0014] image 3 is a plan view showing a semiconductor device according to an embodiment of the present invention. A device isolation structure 130 defining an active region 120 is formed over the semiconductor substrate 100 . In the semiconductor substrate 100 , a recess region is formed in a portion of the active region 120 overlapping with the gate electrode 170 . The recessed area includes a first recessed portion 140 having three slots. The three slots of the first recess 140 are formed parallel to the longitudinal direction of the gate 170 . As described below, in the semiconductor substrate 100 , a spherical depressed portion is formed at the bottom of each of the three slots formed in the first depressed portion 140 .

[0015] Figures 4a to 4q is a cross-sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. Figures 4a to 4q is along image 3 A cross-sectional view taken along the line B-B'. ...

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Abstract

A semiconductor device includes a semiconductor substrate including an active region and a gate region, and a gate channel formed in a portion of the active region that overlaps the gate region. The gate channel includes a recessed multi-bulb structure.

Description

technical field [0001] The present invention generally relates to a semiconductor device. More particularly, the present invention relates to a semiconductor device including a recessed transistor and a method of manufacturing the same. Background technique [0002] Due to the higher level of integration required for semiconductor devices, process margins for forming active regions and device isolation structures have been reduced. As the critical dimension ("CD") of the gate becomes smaller, the channel length is shortened, thereby causing a short channel effect ("SCE") that degrades electrical characteristics of the semiconductor device. The short channel effect degrades the refresh characteristics of the gate. To avoid short channel effects, recessed gates can be used. The recessed gate is obtained by etching a portion of the semiconductor substrate to increase the contact area between the active region and the gate, thereby increasing the gate channel length. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/10H01L29/423H01L29/78H01L21/306H01L21/28H01L21/336H01L21/8234
CPCH01L29/1037H01L29/78H01L27/11H01L29/66621H10B10/00H01L21/18
Inventor 金正三
Owner SK HYNIX INC