Low-dimensional nano material microstructure and device and method for electrical performance testing
A low-dimensional nanometer and electrical performance technology, which is applied in measuring devices, analyzing materials, and using radiation for material analysis. Difficult to achieve and other problems, to achieve the effect of wide application range, simple structure and convenient installation
Inactive Publication Date: 2012-08-22
BEIJING UNIV OF TECH
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Problems solved by technology
At present, the existing technical means can only statically observe the sample in the transmission electron microscope to obtain the microstructure information of low-dimensional nanomaterials, while in-situ electrical measurement can be performed in the scanning electron microscope, but the low-dimensional nanomaterials cannot be obtained. Microstructure information, it is difficult to measure the microstructure and electrical properties of low-dimensional nanomaterials in the electrified state
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[0022] The present invention conducts an in-situ electrification test on low-dimensional nanomaterials by electrifying the device, and implements the following steps:
[0023] Specifically, the devices carrying low-dimensional nanomaterials are as follows from bottom to top: using SiO 2 As barrier layer 1, silicon wafer as substrate 2, SiN as amorphous layer 3, on amorphous layer 3 gold is used as metal electrode 4 and photolithography alignment mark 5, SiO 2 The barrier layer and the silicon wafer are etched to form the window 6, the GeSbTe phase change material is used as the low-dimensional nanomaterial 7 between the gold electrodes, the GeSbTe phase change material is directly above the window 6, and the GeSbTe phase change material is used above the SiN serves as the amorphous barrier layer 8 .
[0024] The method for testing the microstructure and electrical properties of low-dimensional nanomaterials in an electrified state by using the above-mentioned device is charac...
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Abstract
The invention relates to a low-dimensional nano material microstructure and a device and a method for electrical performance testing. The device is characterized in that an amorphous layer is positioned above a substrate, a blocking layer is positioned under the substrate, the middle parts of the blocking layer and the substrate are etched to form a window, metal electrodes are on the amorphous layer, and a low-dimensional nano material is between the metal electrodes, is positioned on the amorphous layer opposite to the right upper part of the window, and is made into an amorphous blocking layer; and conducting wires are led out of the metal electrodes. The invention provides a method for transferring and fixing the low-dimensional nano material, which can simultaneously carry out power turn-on measurement for the low-dimensional nano material, and can measure the correlation of the microstructure and the electrical performance of the low-dimensional nano material in situ under atom lattice resolution.
Description
Technical field: [0001] The present invention relates to a test device and method for the microstructure and electrical properties of low-dimensional nanomaterials, more specifically, an in-situ real-time dynamic low-dimensional nanomaterial microstructure-electrical transport performance correlation test in the electrified state Measuring devices and methods. Background technique: [0002] Transmission electron microscopy is one of the most powerful research tools in nanoscience and technology. The sample holder of the transmission electron microscope is used to support the sample under inspection. As the basic structural unit of devices, low-dimensional nanomaterials carry important functions such as information transmission and storage. The low-dimensional nanomaterials used in the semiconductor and information industries, under the action of an external field, study the effects of changes in their microstructure and size effects on the performance of the low-dimensiona...
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IPC IPC(8): G01N23/04G01N27/00G01R31/00
Inventor韩晓东刘攀张泽
OwnerBEIJING UNIV OF TECH