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Reaction chamber component resisting plasma corrosion, preparation method thereof and plasma reaction chamber comprising same

A technology of anti-plasma and plasma, applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, electrical components, etc., can solve problems such as hindering the conduction of radio frequency signals

Active Publication Date: 2011-07-20
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a reaction chamber component resistant to plasma corrosion, which overcomes the deficiencies of the prior art and solves the problem that the reaction chamber component hinders the conduction of radio frequency signals in the prior art

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  • Reaction chamber component resisting plasma corrosion, preparation method thereof and plasma reaction chamber comprising same
  • Reaction chamber component resisting plasma corrosion, preparation method thereof and plasma reaction chamber comprising same
  • Reaction chamber component resisting plasma corrosion, preparation method thereof and plasma reaction chamber comprising same

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Embodiment Construction

[0020] The invention provides a plasma corrosion-resistant reaction chamber part used in a plasma reaction chamber. The reaction chamber part can not only resist the plasma corrosion generated inside the reaction chamber, but also has high electrical conductivity, so it is different from the existing Unlike the plasma-corrosion-resistant chamber parts of the technology, it can be used as the RF channel of the chamber, thereby routing the RF signal to ground. The reaction chamber components may include various reaction chamber interior components, including but not limited to: reactor chamber wall, reactor liner, gas shower head, gas shower Grounding ring of gas showerhead, wafer chuck edge ring, substrate support, plasma confinement ring, focus ring, row Gas ring (baffle ring), etc.

[0021] The reaction chamber part of the present invention is made of yttrium oxide material and a small amount of doping elements through sintering or hot pressing, and the finished reaction cha...

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Abstract

The invention relates to a reaction chamber component resisting plasma corrosion and used in a plasma reaction chamber. The reaction chamber component is made of yttria material and a small amount of doping elements. The reaction chamber component is provided with a specific resistivity less than 10 Ohm-cm, which can be used as a radio-frequency channel of the reaction chamber. In another embodiment of the invention, the reaction chamber component at least comprises a first conducting substrate and a second conducting substrate which are connected together. The second conducting substrate is formed by sintering or hot pressing yttria material and a small amount of doping elements and is provided with a specific resistivity less than 10 Ohm-cm.

Description

【Technical field】 [0001] The invention relates to semiconductor processing equipment, in particular to a plasma reaction chamber component used in a plasma reaction chamber, a manufacturing method thereof and a plasma reaction chamber containing the component. 【Background technique】 [0002] Semiconductor processing includes a series of process steps to produce many defined integrated circuits on a semiconductor substrate, substrate or wafer. Plasma chambers are widely used in semiconductor manufacturing. In order to generate plasma in the plasma reaction chamber, the interior of the plasma reaction chamber needs to be evacuated, and then the precursor gas is injected, and the radio frequency energy is coupled into the plasma reaction chamber, and then the precursor gas is excited to the plasma state, Thereby processing various layers of substances on semiconductor substrates, substrates or wafers. However, during the processing of the plasma reaction chamber, the surface ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00C23C16/44H01J37/32B01J19/02C04B35/505C04B35/64C04B37/00
Inventor 吴万俊倪国强
Owner ADVANCED MICRO FAB EQUIP INC CHINA