MOS (Metal Oxide Semiconductor) transistor and fabricating method thereof
A technology of a MOS transistor and a manufacturing method, which is applied in the field of MOS transistors and their manufacturing, can solve the problems of impurity enhancement diffusion, affecting the control and matching of transistor threshold voltage, etc., and achieves the effect of enhancing diffusion effect and suppressing transient state.
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[0035] Below by describing specific embodiment in detail according to accompanying drawing, above-mentioned object and advantage of the present invention will be clearer:
[0036] The present invention firstly provides a manufacturing method of a MOS transistor, please refer to figure 1 , including: performing step S11, providing a semiconductor substrate, an isolation structure is formed in the semiconductor substrate, and the isolation structure divides the semiconductor substrate into different active regions where MOS transistors are to be formed, and the active regions include MOS The channel region of the transistor; perform step S13, introduce the first ion in the active region of the semiconductor substrate to form an isolation well; perform step S15, introduce the second ion in the active region of the semiconductor substrate, to adjust the threshold voltage of the MOS transistor; execute step S17 to introduce carbon ions into the channel region of the MOS transistor...
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