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Process for cleaning semiconductor element

A washing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, photoplate making process of patterned surface, etc., to achieve the effect of inhibiting post-corrosion

Inactive Publication Date: 2011-05-04
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned stripping solution is widely used because it has good residue stripping properties and excellent corrosion prevention effect on the substrate, but after-corrosion (it does not occur immediately after the cleaning treatment, but oxidation occurs on the side wall of the Al wiring after being left for a few hours after the treatment) The occurrence of foreign matter) becomes a problem

Method used

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  • Process for cleaning semiconductor element
  • Process for cleaning semiconductor element
  • Process for cleaning semiconductor element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～20、 comparative example 1～6

[0052] figure 1 A cross-sectional view showing the aluminum alloy (Al—Cu) wiring 4 formed by dry etching using the photoresist layer as a mask, and then ashing the photoresist layer with plasma gas. In the lower part of the figure, a silicon substrate 1, a silicon oxide film 2, a titanium nitride layer 3 as a barrier layer, and an Al-Cu wiring layer 4 are formed, and a titanium nitride layer is formed on the upper layer. Resist residue 5 remained on the side wall and upper part of the Al-Cu wiring. This aluminum wiring was used as a sample for evaluation, and a single wafer cleaning (single wafer cleaning) process was implemented in accordance with the composition liquid and process procedure described in Table 1.

[0053] After the processed wafer was left in a clean room for 24 hours, SEM observation (S-5500 manufactured by Hitachi) was performed to evaluate the effect of suppressing residue removal, material corrosion, and post-corrosion. The SEM observation conditions w...

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Abstract

In a wiring formation process for a semiconductor device, a resist residue generated during dry etching by a reactive gas or ashing by a plasma gas is removed without corroding a member of the semiconductor device such as an interlayer insulting material or a wiring material, while suppressing after-corrosion which occurs in a certain time after completion of the process. By sequentially performing (1) a cleaning step by means of an aqueous solution containing hydrofluoric acid, (2) a cleaning step by means of a mixed solution of hydrogen peroxide and ammonia, and (3) a cleaning step by meansof a hydrogen peroxide solution, a resist residue on the side wall of metal wiring which is mainly composed of aluminum (Al) can be removed, while suppressing occurrence of after-corrosion.

Description

technical field [0001] The present invention relates to a cleaning method capable of removing resist residue remaining on the side walls of the wiring when the wiring is processed by dry etching in a wiring formation process of a semiconductor device, Resist residues remaining during the ashing removal of the resist layer can be removed without corroding components of semiconductor devices such as interlayer insulating materials and wiring materials, and after-corrosion caused by processing can be prevented. Background technique [0002] Conventionally, a photolithography technique has been applied to a process of forming a metal wiring mainly composed of aluminum (Al) in a semiconductor device. Photolithography technology refers to the following microfabrication technology: coating photoresist on the surface layer of wiring material, interlayer insulating material, etc., then forming a pattern by exposure and development, and then using the patterned photoresist layer as a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/306H01L21/3213
CPCG03F7/423H01L21/02071
Inventor 田中圭一外赤隆二
Owner MITSUBISHI GAS CHEM CO INC