Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of reduced on-resistance and drift resistance, and achieve the effects of reducing electric field concentration, improving breakdown voltage and breakdown resistance

Active Publication Date: 2015-08-19
RENESAS ELECTRONICS CORP
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in lower drift resistance and lower on-resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0054] An exemplary structure of a semiconductor device according to a first embodiment of the present invention will be described with reference to the drawings. figure 1 is a cross-sectional view showing a main part of the semiconductor device according to the first embodiment. Figure 2A is a plan view of the main part of the semiconductor device. Figure 2B is an overall plan view of the semiconductor device. For clarity of description, the scale and position of each component are appropriately changed and are different from actual ones.

[0055] The semiconductor device 1 of the first embodiment has a structure in which at least one vertical power MOSFET (transistor element) 200 having a super junction (SJ) structure is formed on a first conductivity type semiconductor substrate 101 . In the first embodiment, a plurality of MOSFETs 200 are formed on a single semiconductor substrate 101 . A region in which a plurality of MOSFETs 200 are formed is called an element forma...

no. 2 example

[0108] The structure of a semiconductor device according to a second embodiment of the present invention will be described with reference to the drawings. Figure 5 is a cross-sectional view showing a main part of the semiconductor device of the second embodiment. The same components as those of the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

[0109] The basic structure of the semiconductor device 2 of the second embodiment is similar to that of the semiconductor device of the first embodiment. In the second embodiment, the second conductivity type annular diffusion region 303 in the peripheral region 300X is divided into a plurality of regions with spaces therebetween. In the second embodiment, the second conductivity type annular diffusion region 303 is divided into two regions 303P1 (inside) and 304P2 (outside).

[0110] In the second embodiment, the positions of the innermost end 303A and the outermost end 303B of t...

no. 3 example

[0114] The structure of a semiconductor device according to a third embodiment of the present invention will be described with reference to the drawings. Figure 6 is a cross-sectional view showing a main part of a semiconductor device according to a third embodiment. The same components as those of the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

[0115] The basic structure of the semiconductor device 3 of the third embodiment is similar to that of the semiconductor device of the first embodiment. According to the third embodiment, in the element formation region 200X, the second conductivity type base region 203 and the second conductivity type columnar region 205 are spaced apart from each other when viewed in cross section. The second conductivity type base region 203 of the element formation region 200X and the second conductivity type annular diffusion region 303 of the peripheral region 300X are preferably formed i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In one aspect, a semiconductor device includes a semiconductor substrate; and a transistor element including a parallel structure of a first-conductivity-type drift region and a second-conductivity-type column region, and a second-conductivity-type base region, the transistor element being formed on the semiconductor substrate. An outer peripheral region located outside an element forming region has a parallel structure of a first-conductivity-type drift region and a second-conductivity-type column region, and a second-conductivity-type annular diffusion region which is formed at a side of the base region and which is spaced apart from the base region. An innermost end and a neighboring portion thereof of the annular diffusion region are located on the column region, and an outermost end of the annular diffusion region is located outside an outermost peripheral column region. A field insulating film that covers the annular diffusion region is stacked on the semiconductor layer in the outer peripheral region.

Description

[0001] Cross References to Related Applications [0002] This application is based on the benefit of priority of Japanese Patent Application No. 2010-57886 filed on March 15, 2010 and Japanese Patent Application No. 2010-280431 filed on December 16, 2010, the entire disclosures of which are incorporated herein by reference . Background technique [0003] The present invention relates to a semiconductor device having a so-called superjunction structure. [0004] As a typical semiconductor device realizing a high breakdown voltage and a large current capacity, there is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of power MOSFET allows current to flow between a pair of electrodes formed on both surfaces of a substrate. It is called a vertical power MOSFET. Vertical power MOSFETs are widely used as switching devices and the like with low on-resistance. [0005] Depending on the intended application, the vertical power MOSFET is designed to hav...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/36H01L29/739H01L27/088
CPCH01L29/0634H01L29/0696H01L29/402H01L29/7813H01L29/0619H01L29/1095H01L29/7811
Inventor 猪股久雄
Owner RENESAS ELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com