Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrostatic chuck

An electrostatic chuck, electrostatic technology, applied in circuits, electrical components, electrical solid devices and other directions, can solve problems such as dielectric breakdown

Inactive Publication Date: 2012-01-04
M CUBED TECH
View PDF12 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, highly insulating materials tend to have high or large "leakage currents" that can eventually lead to dielectric breakdown

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic chuck
  • Electrostatic chuck
  • Electrostatic chuck

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Modes for carrying out the invention

[0020] Prior art electrostatic chucks are typically prepared by depositing one or more electrostatically attractive regions featuring electrodes and insulating material on a chuck support material, thereby forming an integrated device. Electrostatically attractive elements generally cannot be removed from the support structure. Furthermore, prior art electrostatic attraction elements may feature relatively bulky insulating material. Since the electrostatic chuck typically heats up during wafer processing, consideration must be given to the respective coefficients of thermal expansion ("CTE") of the materials that make up the electrostatic attraction elements and the materials that make up the support structure. More specifically, if the difference in CTE between the two materials is too great, a split or other fatal failure can occur. Therefore, matching the various CTEs has been a major consideration in the prior art, which unfo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An electrostatic chuck featuring a chuck support structure, and a plurality of discrete electrostatic components. Each of the electrostatic components features at least one termination attached to an electrode on an electrically insulating material. At least some of the discrete electrostatic components are removably attached to the chuck support structure or to a substrate that is interposed between said chuck support structure and the electrostatic components.

Description

[0001] Cross-references to related patents and patent applications [0002] This patent document claims priority to US Provisional Patent Application Serial No. 61 / 200,240, filed November 25, 2008. technical field [0003] The present invention relates to machines for supporting and / or transporting wafers of semiconductor material during their processing to make useful products, such as integrated circuits or solar cells. More specifically, the present invention relates to devices or "chucks," sometimes referred to as "electrostatic chucks, that utilize electrostatic forces to support or transport such wafers to hold or hold the wafer in place during or between processing steps. ". Background technique [0004] Existing techniques for making electrostatic chucks have included the deposition of thin film metal electrodes and ceramic insulating layers on a support substrate using thin film techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD) or...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/687H01L21/203H01L21/205
CPCH01L21/6875C23C14/505C23C16/4581H01L21/6831H01L21/6833C23C16/4586H01L24/96H01L2924/14H01L2924/3511Y10T29/49004Y10T279/23H01L2924/00
Inventor 梅梅特·A·阿克巴斯
Owner M CUBED TECH