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Correction method for device dismatch of bipolar transistor

A technology of bipolar transistors and devices, which can be used in instruments, special data processing applications, electrical digital data processing, etc., and can solve problems such as the lack of bipolar transistor device mismatch models

Active Publication Date: 2013-03-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Device mismatch models for bipolar transistors are currently missing in SPICE software

Method used

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  • Correction method for device dismatch of bipolar transistor
  • Correction method for device dismatch of bipolar transistor
  • Correction method for device dismatch of bipolar transistor

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Experimental program
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Embodiment Construction

[0037] The correction method of the device mismatch of the bipolar transistor of the present invention is:

[0038] First, determine the process mismatch parameters of bipolar transistors as six model parameters in the GP model, which are the transport saturation current IS of bipolar transistors, the forward current emission coefficient NF, the current amplification factor BF, the forward Lai voltage VAF, emitter junction capacitance CJE, collector junction capacitance CJC. From the perspective of the physical mechanism of the process mismatch of the bipolar transistor, it is mainly caused by the random fluctuation of the semiconductor process parameters. The transport saturation current IS, the forward current emission coefficient NF, the emitter junction capacitance CJE, and the collector junction capacitance CJC are just a direct reflection of the fluctuation of random process parameters. From the perspective of the physical mechanism of bipolar transistors, the current a...

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Abstract

The invention discloses a correction method for device dismatch of a bipolar transistor. The procedure is that: firstly, defining that the technological dismatch parameters of the bipolar transistor are six model parameters of a gummel-poon (GP) model, namely transportation saturation current, positive current transmitting coefficient, current amplifying multiple, positive early voltage, emitter junction capacitance and collector junction capacitance; secondly, setting random deviations of the six parameters; and thirdly, correcting the device dismatch of the bipolar transistor. The correction method for device dismatch of the bipolar transistor can perform simulation analysis to the device dismatch of the bipolar transistor in simulation program with integrated circuit emphasis (SPICE) software, and the influence to the device dismatch of the bipolar transistor of emitter width We, emitter length Le and device distance D is fully considered.

Description

technical field [0001] The invention relates to a mismatch correction method of a semiconductor device. Background technique [0002] In the process of integrated circuit design and production, due to uncertainty, random error, gradient error and other reasons, some semiconductor devices that are exactly the same in design have deviations after production, which is called mismatch of semiconductor devices. Device mismatch can cause changes in device structural parameters and electrical parameters, which can greatly affect the characteristics of analog circuits. With the development of semiconductor production technology, the size of devices continues to shrink, and device mismatch is mainly caused by random errors, which are usually caused by integrated circuit production processes. [0003] SPICE (Simulation Program with Integrated Circuit Emphasis) is a general-purpose integrated circuit simulation software. Because device mismatch has a great influence on integrated cir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP