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Method for correcting device mismatch of capacitor

A technology of capacitors and devices, which is applied in the field of mismatch correction of semiconductor devices, and can solve problems such as the lack of device mismatch models

Active Publication Date: 2013-03-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Device mismatch models for capacitors are currently missing in SPICE software

Method used

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  • Method for correcting device mismatch of capacitor
  • Method for correcting device mismatch of capacitor
  • Method for correcting device mismatch of capacitor

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Embodiment Construction

[0025] The correction method of the device mismatch of electric capacity of the present invention is:

[0026] First, determine the process mismatch parameters of the capacitor as three, namely the area type capacitance density CA, the perimeter type capacitance density CP, and the capacitance value C. The reason why these three parameters are used as the process mismatch parameters of the capacitor is that the following physical meanings exist between these three parameters:

[0027] C=CA×(W×L)+CP×2×(W+L), which is formula 0. Where W is the capacitor width and L is the capacitor length.

[0028] Secondly, based on the research and analysis of device mismatch data of a large number of capacitors, it is found that the random deviations of the above three parameters are inversely proportional to the capacitor width W and capacitor length L, and proportional to the spacing D between capacitors, thus obtaining Random error for each process mismatch parameter, including:

[0029...

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Abstract

The invention discloses a method for correcting device mismatch of a capacitor, which comprises the following steps: firstly, determining the process mismatch parameters of the capacitor to be three, wherein the three parameters respectively comprise area-type capacitor density, perimeter-type capacitor density and a capacitance value; secondly, setting the random deviations of the three parameters; and thirdly, performing correction on the device mismatch of the capacitor. In the method for correcting the device mismatch of the capacitor, simulation analysis can be performed on the device mismatch of the capacitor in SPICE software. Moreover, the influences of capacitor width W, capacitor length L and device distance D on the device mismatch of the capacitor are fully considered.

Description

technical field [0001] The invention relates to a mismatch correction method of a semiconductor device. Background technique [0002] In the process of integrated circuit design and production, due to uncertainty, random error, gradient error and other reasons, some semiconductor devices that are exactly the same in design have deviations after production, which is called mismatch of semiconductor devices. Device mismatch can cause changes in device structural parameters and electrical parameters, which can greatly affect the characteristics of analog circuits. With the development of semiconductor production technology, the size of devices continues to shrink, and device mismatch is mainly caused by random errors, which are usually caused by integrated circuit production processes. [0003] SPICE (Simulation Program with Integrated Circuit Emphasis) is a general-purpose integrated circuit simulation software. Because device mismatch has a great influence on integrated cir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 周天舒王正楠
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP