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Precharging circuit and method for DC-DC boost converter

A technology of pre-charging circuit and boost converter, which is applied in the direction of converting DC power input to DC power output, instruments, electrical components, etc., which can solve the problems of DC-DC boost converter start-up time delay, etc., and achieve fast start-up, good reliability

Active Publication Date: 2014-06-25
SILERGY SEMICON TECH (HANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this circuit is that as the output voltage continues to rise, the drain-source voltage difference of the power transistor PFET will gradually decrease, so the charging current will also decrease, as Figure 1B shown, for Figure 1A The working waveform diagram of the pre-charging circuit shown, the charging current I charge With the output voltage V out decreases with an increase in the output voltage V out close to the input voltage V in , the charging current I charge It will drop to a very low level, even close to zero, which will cause some subsequent larger loads to fail to start, limit the size of the load during the start-up process, and cause a delay in the start-up time of the DC-DC boost converter

Method used

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  • Precharging circuit and method for DC-DC boost converter
  • Precharging circuit and method for DC-DC boost converter
  • Precharging circuit and method for DC-DC boost converter

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Embodiment Construction

[0029] Several preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention is not limited to these embodiments. The present invention covers any alternatives, modifications, equivalent methods and schemes made on the spirit and scope of the present invention. In order to provide the public with a thorough understanding of the present invention, specific details are set forth in the following preferred embodiments of the present invention, but those skilled in the art can fully understand the present invention without the description of these details.

[0030] refer to Figure 2A , shows a precharge circuit for a DC-DC boost converter according to the present invention, the precharge circuit includes a reference transistor Qr, the reference transistor Qr and the DC-DC boost converter The power transistor Q in M constitute a current mirror circuit, wherein the reference transistor Qr an...

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Abstract

The present invention discloses precharge circuits and methods for DC-DC boost converters. In one embodiment, a precharge method for a DC-DC boost converter having a current mirror circuit that includes a reference transistor and a power transistor, can include: (i) maintaining a reference current flowing through the reference transistor as substantially constant; (ii) maintaining a drain-source voltage of the reference transistor and a drain-source voltage of the power transistor as substantially equal; and (iii) obtaining a substantially constant mirror current by reflecting the reference current through the power transistor to operate as a precharging current of a precharge circuit.

Description

technical field [0001] The invention relates to the technical field of power electronics, and more specifically, to a precharging circuit and a precharging method used in a DC-DC step-up converter. Background technique [0002] The DC-DC boost converter can be applied to a variety of different electronic devices. During the startup process of the DC-DC boost converter, in order to avoid damage to the electronic equipment due to the strong inrush current during startup, it is generally Pre-charge before work, that is, pre-charge to make the output voltage closer to the input voltage. Therefore, in the circuit design of the DC-DC boost converter, the pre-charging circuit is an indispensable link. [0003] refer to Figure 1A , shows a traditional pre-charging circuit, its power transistor PFET and reference transistor P1 form a current mirror circuit, and the drain voltage of the power transistor PFET is used as the output voltage. The voltage is precharged to make it rise t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/156H02M1/00
CPCG05F1/468G05F3/26H02M1/36H02M3/156H02M3/157H02M3/155H02M3/158H02M1/0045
Inventor 董晋平
Owner SILERGY SEMICON TECH (HANGZHOU) CO LTD