Deposition device

A technology of deposition device and air intake pipe, which is applied in gaseous chemical plating, coating, electrical components, etc., can solve the problem of high use cost, and achieve the effect of avoiding blockage, reducing use cost and improving normal working time.

Active Publication Date: 2012-10-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the silicon nitride thin film deposition device is shut down or on standby, it is necessary to continuously heat the exhaust gas discharge pipe 107 through the heating belt, resulting in higher cost of use of the silicon nitride thin film deposition device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deposition device
  • Deposition device
  • Deposition device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0034] refer to figure 2 , is a schematic structural diagram of an embodiment of the deposition device of the present invention, including: a first inlet pipe 201 , a second inlet pipe 203 , a gas reaction chamber 205 , an exhaust gas discharge pipe 207 and a blockage removal inlet pipe 211 .

[0035] exist figure 2 In the deposition device, the first gas inlet pipe 201 and the second gas inlet pipe 203 are connected to the gas reaction chamber 205 for introducing reaction gas into the gas reaction chamber 205; the tail gas discharge pipe 207 reacts with the gas The cavity 205 is connected to discharge the by-products or unreacted gas generated by the deposition reaction out of the gas reaction cavity 205; Through, it is suitable for feeding sacrificial gas into the tail gas discharge pipe 207 to discharge the by-products produced by the reaction in the tail gas discharge pipe 207 when the silicon nitride thin film deposition device is in shutdown or standby state.

[0036...

no. 2 example

[0043] refer to image 3 , a schematic structural diagram of another embodiment of the deposition apparatus of the present invention. The deposition device of silicon nitride in this embodiment includes: a first gas inlet pipe 301, a second gas inlet pipe 303, a gas reaction chamber 305, an exhaust gas discharge pipe 307, a blockage removal gas inlet pipe 311, a gas flow monitor 315 (MFM, Mass Flow Meter) and switch components 313.

[0044] In this embodiment, one end of the gas flow monitor 315 is connected to the opening of the blockage removal inlet pipe 311 to monitor the flow rate of the sacrificial gas passing through the blockage removal inlet pipe 311 into the tail gas discharge pipe 307 .

[0045] Except this embodiment, can also replace with gas flow monitor (MFC, Mass Flow Controller) image 3 The gas flow monitor 315 is used to monitor and control the flow rate of the sacrificial gas that passes through the blockage removal inlet pipe 311 into the tail gas discha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a deposition device. The deposition device comprises a gas reaction cavity, a tail gas discharge pipe and a draining and blocking gas inlet pipe, wherein the tail gas discharge pipe is connected with the gas reaction cavity; and the draining and blocking gas inlet pipe is positioned on the side wall of the tail gas discharge pipe and communicated with the tail gas discharge pipe. The tail gas discharge pipe in the deposition device is difficult to block, so that the normal working time of the deposition device is prolonged; and the tail gas discharge pipe is not required to be continuously subjected to heat preservation, so that resources can be saved, and cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a deposition device. Background technique [0002] When the existing process deposits silicon nitride film, due to silicon nitride (Si 3 N 4 ) film has a high dielectric constant and is widely used as a dielectric material in the field of semiconductor manufacturing. For example, in the process of manufacturing flash memory, a layer of ONO needs to be formed as a floating gate (Floating Gate) and a control gate (Control Gate). The dielectric material between them, O in the ONO layer represents a silicon dioxide film, and N represents a silicon nitride film. [0003] In addition, the silicon nitride film is not easy to be penetrated by oxygen molecules. Taking advantage of this advantage, silicon nitride is used as the masking layer to prevent the active area (Active Area) on the wafer surface during the field oxide layer production process. is oxidized to p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/455C23C16/52C23C16/34H01L21/318
Inventor李占斌
OwnerSHANGHAI HUAHONG GRACE SEMICON MFG CORP