Vertically mutual crossing semiconductor capacitor
A technology of semiconductors and capacitors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as low capacitance density, high manufacturing cost, excessive area consumption, etc.
Active Publication Date: 2015-06-17
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
As device sizes continue to decrease, MOM structures used in conventional semiconductor capacitors may suffer from problems such as excessive area consumption, low capacitance density, and / or high manufacturing costs
[0004] Thus, while existing semiconductor capacitor devices are generally suitable for their intended purposes, they cannot as a whole satisfy all aspects
Method used
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[0034] It will be appreciated that the following disclosure provides a number of different embodiments or examples for implementing different features of the various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, reference in the following description to a first feature being formed on or over a second feature may include embodiments where the first and second features are formed in direct contact, and may also include that additional features may be formed between the first and second features , such that the first and second features are not in direct contact. Additionally, the present disclosure may repeat reference numerals and / or characters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various disclosed embodiments and / or configurations....
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The present invention provides a semiconductor device. The semiconductor device comprises: a substrate across an X-direction and a Y-direction orthogonal to the X-direction, and an interconnect structure formed in a Z-direction orthogonal to the X-direction and the Y-direction on the substrate. The interconnect structure comprises a plurality of metal wires interconnected in the Z-direction by a plurality of through holes. The interconnect structure includes a capacitor. The capacitor includes an anode assembly and a cathode assembly. The anode assembly includes an array for extending the anode stack with extension in the Z-direction. The cathode assembly comprises an array for extending the cathode stack with the extension of the Z-direction. The array of the anode stack is crossed with the array of the cathode stack in the X-direction and the Y-direction.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuits. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing are required for these advances to be realized. In the course of integrated circuit evolution, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest feature (or line) that can be created using a fabrication process) decreases. [0003] Various active or passive electronic components can be formed on a semiconductor IC. For example, semiconductor capacitors may be formed as passive ...
Claims
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IPC IPC(8): H01L23/522H01L21/02
CPCH01L2924/0002
Inventor 卓秀英
Owner TAIWAN SEMICON MFG CO LTD