Flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device
A flat-plate, vacuum chamber technology, applied in the field of machinery, can solve problems such as uneven deposition of film layers, affecting film quality, and changes in the distance between two polar plates, so as to eliminate blind spots in gas distribution, improve energy transmission efficiency, and eliminate maintenance cost effect
Active Publication Date: 2013-04-24
SHENZHEN JT AUTOMATION EQUIP CO LTD
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- Description
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AI Technical Summary
Problems solved by technology
[0011] 1. After the metal electrode of the direct flat-plate PECVD device works in a high-temperature environment for a long time, the electrode plate will be deformed, and the distance between the two plates will change, which will lead to uneven deposition of the film;
[0012] 2. The electrode of the direct flat plate PECVD device is directly above the sample and directly contacts the plasma. The plasma is easy to adhere to the surface of the electrode. After a long time of use, dust will gather and fall to pollute the sample. If there are impurities on the surface of the cell, it will Reduce battery conversion efficiency or even make it scrapped;
[0013] 3. The direct plate type PECVD device generally adopts medium and low frequency (40-460KHz) power supply. Although the film quality is relatively dense, the surface damage of the substrate is often caused by excessive ion energy;
[0014] 4. The microwave source frequency of the microwave indirect PECVD device is 2.45GHz, and the plasma energy generated by the microwave action is low, which affects the film quality;
[0016] 6. In the microwave indirect PECVD device, the plasma is not formed above the sample, but is directed to the workpiece by an external magnetic field and air flow and then deposited on the surface of the sample. The film formed in this way is loose and of poor quality
Method used
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no. 2 example
[0054] Such as Figure 8 As shown, the flat PECVD device of the present invention can connect two or more vacuum chambers together in practical application (the structure of the vacuum chamber is as follows image 3 shown), to achieve the deposition of multi-layer material films for experimental research or other industrial production.
no. 3 example
[0056] In the practical application of the flat PECVD device of the present invention, the plasma emitter can be installed under the vacuum chamber to realize the deposition of the film, such as Figure 9 shown.
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Abstract
The invention discloses a flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device which comprises a vacuum chamber body for holding a workpiece and a plasma transmitter arranged above the vacuum chamber body, wherein the plasma transmitter comprises a transmitting box which is fixed together with the vacuum chamber body and a radio frequency impedance adapter arranged above the transmitting box; a medium window is linked below the transmitting box; an antenna body which is linked with the radio frequency impedance adapter is fixedly arranged above the transmitting box; the antenna body comprises an antenna arranged inside the transmitting box and a connection end which is used for linking the antenna and the radio frequency impedance adapter; a radio frequency power supply is externally connected with the radio frequency impedance adapter; a process gas inlet tube is fixedly arranged on the vacuum chamber body; and an installing groove corresponding to the transmitting box is arranged above the vacuum chamber body. The flat plate type PEVCD device is provided with a stable and safe radio frequency power supply with moderate power; and due to a copper antenna for controlling the plasma and the unique process gas inlet mode, workpieces such as silicon nitride films with excellent properties of uniformity, compactness and pollution freeness can be deposited.
Description
technical field [0001] The invention relates to the mechanical field, in particular to a flat-plate PECVD device. Background technique [0002] In the prior art, in order to improve the efficiency of silicon solar cells, firstly, it is necessary to passivate the electrically active impurities and defects contained in silicon materials, so as to reduce the recombination effect of surface defects on minority carriers; secondly, it is necessary to reduce The reflection on the front surface of the solar cell increases the absorption of sunlight by the cell. [0003] On the one hand, there are many dangling bonds on the silicon surface, which have a strong attraction to the non-equilibrium carriers in the N-type emitter region, which makes the minority carriers recombine, thereby reducing the current. Therefore, some atoms or molecules need to be used to saturate the dangling bonds of these surfaces. Experiments have found that the hydrogen-containing SiNx film has a strong pas...
Claims
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IPC IPC(8): C23C16/505
CPCH01L31/1876C23C16/345C23C16/45578C23C16/4583C23C16/545H01J37/321H01J37/3211H01J37/32183H01J37/32733H01L31/02167H01L31/02168Y02E10/50
Inventor陈洁欣
OwnerSHENZHEN JT AUTOMATION EQUIP CO LTD