Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device, comprising a semiconductor substrate, an isolation structure arranged in the semiconductor substrate, a conductive layer arranged above the isolation structure, a capacitor arranged above the isolation structure, the capacitor includes a top electrode, a bottom electrode and A dielectric is disposed between the top electrode and the bottom electrode, and the first contact electrically connects the conductive layer and the bottom electrode, the bottom electrode substantially engaging the first contact on at least two sides. The invention also discloses a manufacturing method of the semiconductor device.

Description

technical field [0001] The present invention relates generally to semiconductor device fabrication techniques, and more particularly to metal-insulator-metal (MIM) structures, and methods of fabricating the structures and semiconductor devices including the structures. Background technique [0002] Capacitors are components used in many data processing and data storage applications. In general, capacitors consist of two conductive electrodes on either side of a dielectric or other insulating layer, and they can be categorized based on the materials used to form the electrodes. For example, in a metal-insulator-metal (MIM) capacitor, the electrodes are essentially metal. MIM capacitors have the advantage of providing relatively constant capacitance over a relatively wide range of applied voltages. MIM capacitors also have relatively small parasitic resistance. [0003] Generally, to minimize the size of the MIM capacitor, a cup-shaped capacitor structure disposed in the op...

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Problems solved by technology

When the opening of the capacitor has an overlayshift, overetching creates microtrenches under the opening of the capacitor, which can adversely affect reliability

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