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Preparation method of tio2/invo4 nano-junction composites

A composite material and nano-junction technology, which is applied in the field of preparation of TiO2/InVO4 nano-junction composite materials, can solve the problem of low photocatalytic efficiency and so on.

Active Publication Date: 2015-08-26
ZHEJIANG UNIV
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Problems solved by technology

TiO 2 / InVO 4 Composite material is an emerging compound semiconductor system. However, its current preparation is either a simple physical mixing and sintering, which leads to low photocatalytic efficiency; Selectivity of photocatalytic oxidation or reduction

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  • Preparation method of tio2/invo4 nano-junction composites
  • Preparation method of tio2/invo4 nano-junction composites

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preparation example Construction

[0019] TiO 2 / InVO 4 The preparation method of nano junction composite material, comprises the following steps:

[0020] Step A: InVO with a particle size of 0.05 μm to 2 μm 4 The particles are added to the polymer TiO with a solid content of 1% to 5%. 2 sol, and make the molar ratio of In and Ti 1:50~1:10, then stir in a water bath at 50°C for 1h~10h, filter the precipitate, wash it with absolute ethanol for 3 times, and then dry it to obtain a powder. The powder was placed in a muffle furnace at 350°C for 2 hours to obtain TiO 2 Quantum dot modified InVO 4 Particles, TiO on the surface 2 The quantum dots are distributed in a discontinuous island shape.

[0021] Among them, the polymer type TiO 2 The preparation method of the sol is as follows: add butyl titanate to an aqueous ethanol solution containing hydrochloric acid at a pH of 1.5 to 5, wherein the molar ratio of butyl titanate to water is 1:4, mix and stir for 2 hours to obtain a polymerized Physical type TiO ...

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Abstract

The invention relates to the field of semiconductor materials, and aims to provide a preparation method of a TiO2 / InVO4 nanojunction composite material. The preparation method comprises the following steps of: adding InVO4 particles to a polymer type TiO2 sol, and after reacting, filtering and washing the precipitate to obtain powder; retaining the heat of the powder in a muffle furnace for 2h to obtain TiO2 quantum dot modified InVO4 particles; dispersing the modified InVO4 particles in ethanol water to obtain a system, adding the mixed solution of butyl titanate and absolute ethyl alcohol to the system under the condition of stirring in a water bath, and then filtering, washing and drying the precipitate to obtain the TiO2 / InVO4 nanojunction composite material. The preparation method of the TiO2 / InVO4 nanojunction composite material has the characteristics that the forming of core-shell structures caused by excessive coating or homogeneous precipitation of nanocrystals in solution is avoided and the normal-pressure liquid phase growth problem of the nanocrystals is solved by taking hydrated titanium ions as growth units; the surface of the prepared nanojunction composite material shows photocatalytic oxidation and reduction properties simultaneously.

Description

technical field [0001] The present invention relates to the field of semiconductor materials, in particular to TiO 2 / InVO 4 Preparation methods of nanojunction composites. Background technique [0002] TiO 2 It is an important functional semiconductor material and has broad application prospects in energy, environment, electronic information and other fields. However, the lower quantum efficiency limits its practical application, expanding the photoresponse wavelength, promoting the separation of photogenerated carriers, and improving the quantum efficiency of materials have always been TiO 2 important direction of research. Using narrow bandgap semiconductors, such as CdS, WS 2 , ZnFe 2 o 4 、InVO 4 etc., with TiO 2 On the one hand, compounding can effectively combine TiO 2 The wavelength of the photoresponse extends to the visible light band. On the other hand, it can also promote the migration and separation of photogenerated electrons between different semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/22
Inventor 申乾宏杨辉沈建超冯宇蔡奇风盛建松程笛
Owner ZHEJIANG UNIV
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