Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultra-high numerical aperture lithography imaging polarization compensation device and method

A numerical aperture and compensation device technology, which is applied in photolithography exposure devices, micro-lithography exposure equipment, optics, etc., can solve problems that cannot meet the requirements of lithography imaging, achieve resolution and CDU requirements, and accurately control polarization State, improve the effect of lithography effect

Active Publication Date: 2016-12-07
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous improvement of NA of immersion projection objective lens, the IPS achieved by the control of illumination polarization is generally less than 95%, while the polarization requirement of ultra-high NA requires IPS to be greater than 97%, which cannot meet the requirements of lithography imaging.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultra-high numerical aperture lithography imaging polarization compensation device and method
  • Ultra-high numerical aperture lithography imaging polarization compensation device and method
  • Ultra-high numerical aperture lithography imaging polarization compensation device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] An ultra-high numerical aperture lithography imaging polarization compensation device and method for a lithography device according to a specific embodiment of the present invention will be described in detail below with reference to the accompanying drawings. However, the present invention should be understood as not limited to such embodiments described below, and the technical idea of ​​the present invention can be implemented in combination with other known technologies or other technologies having the same functions as those known technologies.

[0022] In the following description, in order to clearly show the structure and working method of the present invention, many directional words will be used to describe, but "front", "rear", "left", "right", "outer", "inner" should be used Words such as ", "outward", "inward", "upper" and "lower" are to be understood as convenient terms, and should not be understood as restrictive terms. In addition, "X direction" should b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ultrahigh numerical aperture lithography imaging polarization compensation apparatus. The apparatus comprises a light source used for providing an illumination light beam, an illumination unit used for adjusting the illumination light beam to an exposed light beam and irradiating a mask plate, a projection objective used for imaging an imaging light beam transmitting the mask plate to a silicon chip, and a polarization compensation device used for the polarization modulation of the exposed light beam or / and the imaging light beam, and positioned between the illumination unit and the mask plate or between the projection objective and the silicon chip.

Description

technical field [0001] The invention relates to the technical field of step-scanning projection lithography machine lithography imaging technology for ultra-large-scale integrated circuit production equipment, and in particular to a high numerical aperture lithography imaging polarization compensation device. Background technique [0002] With the development of projection lithography technology, the performance of the projection optical system of lithography machines has been gradually improved. At present, lithography machines have been successfully used in the field of integrated circuit manufacturing with submicron and deep submicron resolution. When using a lithography machine to manufacture integrated circuit chips, the projection objective lens is required to have a higher resolution in order to realize the preparation of highly integrated chips. In order to meet the higher resolution requirements of the projection light objective, it is necessary to increase the imag...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02F1/03
Inventor 孙文凤
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com