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Chlorosilane Purification Method

A purification method, chlorosilane technology, applied in the direction of halosilane, halide silicon compound, etc., can solve the problems of high energy consumption in the purification process, and achieve the effects of improving core competitiveness, reducing energy consumption, and achieving obvious effects

Active Publication Date: 2016-03-30
CHINA ENFI ENGINEERING CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, an object of the present invention is to propose a method for purifying chlorosilanes, wherein, the method for purifying chlorosilanes can expand the number of coupling towers from 2 or 3 towers to 5 towers, thereby achieving a more energy-saving effect of continuous coupling of five towers Obviously, the energy consumption is reduced by 80%, which solves the problem of high energy consumption in the purification process of the polysilicon system, reduces the production cost of the enterprise, and enhances the core competitiveness of the enterprise

Method used

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  • Chlorosilane Purification Method

Examples

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Effect test

Embodiment 1

[0082] Same process image 3 , the tower feed volume is 20m 3 / h, the feed composition is as follows: the mass content of trichlorosilane is 98%, silicon tetrachloride and dichlorodihydrosilane are both 1%, and metal impurities such as B, P, and Fe are trace amounts.

[0083] The raw material first enters the first rectification tower T1, and the material flow is from the first rectification tower T1 to the fifth rectification tower T5, wherein the pressures of the first rectification tower T1 to the fifth rectification tower T5 increase sequentially.

[0084] The top pressure and temperature of the first rectification tower are 0.25MPa (absolute pressure) and 54.9°C respectively, ensuring that the cooling source of the top of the first rectification tower (that is, the tower with the lowest pressure) is circulating water; the fifth rectification tower The temperature of the bottom of the tower should be lower than 120°C, to ensure that the heat source of the fifth rectificat...

Embodiment 2

[0090] Same process Figure 4 , the tower feed volume is 20m 3 / h, the feed composition is as follows: the mass content of trichlorosilane is 98%, silicon tetrachloride and dichlorodihydrosilane are both 0.1%, and metal impurities such as B, P, and Fe are trace amounts.

[0091] The raw material first enters the fifth rectification tower T5, and the material flow is from the fifth rectification tower T5 to the first rectification tower T1, wherein the pressure from the fifth rectification tower T5 to the first rectification tower T1 decreases sequentially.

[0092] The top pressure and temperature of the first rectification tower are 0.25MPa (absolute pressure) and 54.9°C respectively, ensuring that the cooling source of the top of the first rectification tower (that is, the tower with the lowest pressure) is circulating water; the fifth rectification tower The temperature of the bottom of the tower should be lower than 120°C, to ensure that the heat source of the fifth recti...

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Abstract

The invention discloses a chlorosilane purification method. The method comprises the following steps: carrying out first to fifth rectification purification on first to fifth chlorosilane to obtain first to fifth tower top steams and first to fifth tower bottom liquids; 2, condensing the first tower top steam to obtain a first chlorosilane condensate liquid, and returning parts of the first chlorosilane condensate liquid into a first rectifying tower; 3, carrying out first to fifth reboiling treatment on the first to fifth tower bottom liquids to obtain first to fifth reboiling steams, and returning the first to fifth reboiling steams into first to fifth rectification towers; and 4, carrying out the first to fourth reboiling treatment by using the second to fifth tower top steams to obtain second to fifth chlorosilane condensate liquids. Compared with simple coupled rectification technologies, the above five tower continuous coupling method has a more obvious energy saving effect, enables the energy consumption to be reduced by 80%, and solves a problem that energy consumed by a purification process of a polysilicon system is high, so the production cost is reduced.

Description

technical field [0001] The invention relates to the field of polysilicon, in particular, the invention relates to a method for purifying chlorosilane. Background technique [0002] Polysilicon is an ultra-high-purity material used in integrated circuits, electronic devices and solar cells. It is the cornerstone of the information and new energy industries. It is a strategic material that the country encourages and gives priority to development. It is also a product and industry that the country encourages the development of. In 2012, affected by the global economic crisis and EU anti-dumping measures, the polysilicon market continued to slump. How to reduce polysilicon production costs and how to enhance the core competitiveness of enterprises has become the primary task for the long-term sustainable development of polysilicon enterprises. [0003] At present, the main production method of polysilicon in China is the improved Siemens method, which mainly includes five proces...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 姜利霞严大洲杨永亮赵雄肖荣晖汤传斌
Owner CHINA ENFI ENGINEERING CORPORATION
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