A method of manufacturing an insulated gate bipolar transistor
A technology of bipolar transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unsatisfactory concentration distribution, concentration distribution is not FS structure, etc., and achieve easy thinning control, thickness concentration ideal effect
Active Publication Date: 2017-03-15
CSMC TECH FAB2 CO LTD
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However, the concentration distribution of the formed FS layer is not ideal, and the concentration distribution is not the ideal distribution required by the FS structure
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[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0021] In the following description, many specific details are explained in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the connotation of the present invention. Similar promotion, therefore, the present invention is not limited by the specific embodiments disclosed below.
[0022] Secondly, the present invention will be described in detail in conjunction with schematic diagrams. In detailing the embodiments of the present invention, for ease of description, the cross-sectional view showing the device structure will not be partially enlarged according to th...
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The invention discloses a manufacturing method for an insulated gate bipolar transistor. The manufacturing method includes the steps that a semiconductor substrate of a first electric conduction type is provided and provided with a first main face and a second face; an ion implanted layer of a first electric conduction type is formed on the first main face of the semiconductor substrate; the first main face of the semiconductor substrate extends outwards to form a drift region of a first electric conduction type; a field-stop layer is formed by the iron implanted layer; based on the drift layer, a first main face structure of the insulated gate bipolar transistor is formed; the semiconductor substrate is thinned from the second main face of the semiconductor substrate until the field-stop layer is exposed; a remaining second main face structure continues to be formed on the second main face of the semiconductor substrate where the field-stop layer is formed. Special equipment is not needed, and the whole process can be finished through existing NPT production equipment.
Description
Technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a method for preparing an insulated gate bipolar transistor (IGBT), especially a field-stop insulated gate bipolar transistor (FS-IGBT). Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a new device improved on the basis of VDMOS (Vertical Double-diffused MOSFET). The vertical structure of IGBT has changed from the original PT type. (Punch Through) single structure has developed to the mature NPT type (Non-Punch Through) and FS type (Field-Stop). In the trench structure, there are mainly Planer (plane type). ) And Trench (groove type). [0003] FS-IGBT (field-stop insulated gate bipolar transistor) has the advantages of PT-IGBT (punch-through insulated gate bipolar transistor) and NPT-IGBT (non-punch-through insulated gate bipolar transistor). The FS-IGBT uses the N-type field stop layer to change the electric field distribution from the tria...
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IPC IPC(8): H01L21/331
CPCH01L29/66333
Inventor 王万礼王根毅邓小社芮强
Owner CSMC TECH FAB2 CO LTD