Antistatic radiation shielding memory fabric
An anti-radiation and anti-static technology, applied in the field of fabrics, can solve the problems of single function and no anti-radiation, etc., and achieve the effect of unique memory function and strong three-dimensional effect of the cloth surface
Inactive Publication Date: 2015-01-28
JIANGYIN SHANGFENG TEXTILE
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Problems solved by technology
Ordinary fabrics are single-layer fabrics, and the clothes made of them can only keep warm and cover the body, have a single function, and have no radiation protection function
In addition, the traditional fabrics used to make clothing bodies do not have memory function, antistatic and anti-radiation effects at the same time.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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[0013] see figure 1 , The memory antistatic anti-radiation anti-radiation fabric of the present invention, it comprises base fabric layer 1 and fabric layer 2, is provided with radiation-proof layer 3 between described base fabric layer 1 and described fabric layer 2, and described radiation-proof layer 3 It is a metal fiber, and the metal fiber is arranged in a network structure.
[0014] The base fabric layer uses PTT memory color yarn as the warp yarn, and uses PET polyester fine denier special-shaped glossy yarn as the weft yarn; the warp yarn and weft yarn use 3 / 1 twill or 1 / 1 plain weave or 3 / 1 twill + 1 / 1 plain cavalry twill structure is woven into fabric.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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The invention relates to an antistatic radiation shielding memory fabric. The fabric comprises a base cloth layer (1) and a fabric layer (2), and is characterized in that a radiation shielding layer (3) is arranged between the basic cloth layer (1) and the fabric layer (2), the radiation shielding layer (3) is made of metal fibers, and the metal fibers are arranged in a net structure. A PTT memory color filament is taken as the warp filaments of the basic cloth layer, and a PET polyester fine abnormal-shaped luminous filament is taken as the weft filaments of the basic cloth layer. The weft filaments and the warp filaments are woven into the fabric in a cavalry oblique tissue structure composed of 3 / 1 twill, 1 / 1 tabby, or 3 / 1 twill plus 1 / 1 tabby. The provided fabric can effective prevent the penetration of electromagnetic radiation, and thus achieves the effect of shielding radiation. The fabric also has an antistatic effect.
Description
technical field [0001] The invention relates to a fabric, in particular to a memory antistatic and radiation-proof fabric. Background technique [0002] With the development of science and technology, electronic products are becoming more and more popular, and computers and mobile phones have entered thousands of households, so electromagnetic radiation is also increasing, subtly affecting people's health. Ordinary fabrics are single-layer fabrics, and the clothes made of them can only keep warm and cover the body, have a single function, and have no radiation protection function. In addition, the traditional fabrics used to make clothing bodies do not have memory function, antistatic and anti-radiation effects at the same time. Contents of the invention [0003] The object of the present invention is to overcome the above-mentioned disadvantages and provide a kind of memory anti-static radiation-proof radiation-proof fabric. [0004] The object of the present invention ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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IPC IPC(8): B32B15/09B32B15/14B32B3/12D03D15/00D03D13/00A41D31/02D03D15/283D03D15/37D03D15/50D03D15/533D03D15/54D03D15/547
CPCA41D31/02D03D13/00B32B5/028B32B5/26B32B2307/212B32B2307/21B32B2307/406B32B2262/103B32B2262/0276B32B2437/00D03D15/44
Inventor 孙亚平
Owner JIANGYIN SHANGFENG TEXTILE
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