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Patterned sapphire substrate and light emitting diode

A technology of patterned sapphire and light-emitting diodes, which is applied to electrical components, circuits, semiconductor devices, etc.

Active Publication Date: 2017-09-29
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Threading dislocations formed on the C-plane easily extend to the quantum wells of LEDs, leading to non-radiative recombination

Method used

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  • Patterned sapphire substrate and light emitting diode
  • Patterned sapphire substrate and light emitting diode
  • Patterned sapphire substrate and light emitting diode

Examples

Experimental program
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Embodiment Construction

[0041] The specific implementation of the present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings.

[0042] attached Figure 1~4 A preferred embodiment of the invention is shown, where image 3 is along figure 2 Cross-sectional view cut along the midline A-A, Figure 4 is along figure 2 Cross-sectional view cut along the midline B-B.

[0043] Please see attached figure 1 and figure 2 , a patterned sapphire substrate, the upper surface of which is composed of a pattern structure, and there is no C-plane at all. The pattern structure includes a series of regularly arranged first protrusions P of the first size d1 1 , where the adjacent three first protrusions P 1 -1 、 P 1 -2 and P 1 -4 forms a triangle or a similar triangle, which has a second protrusion P with a second size d2 inside 2 , the adjacent four first protrusions P 1 -1 、 P1 -2, P 1 -3 and P 1 A rhombus is formed between -4, wherein there...

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Abstract

The invention discloses a graphical sapphire substrate, a manufacturing method of the graphical sapphire substrate and the light emitting diode with the substrate. The graphical sapphire substrate is provided with a first surface and a second surface, wherein the first surface and the second surface are opposite, and no C surfaces, namely, 0001 surfaces exist in connection regions between all first protrusion parts. No C surfaces exist on the growth surfaces of the graphical sapphire substrate, and therefore the penetration dislocation density of a gallium nitride epitaxial material on the sapphire substrate is reduced.

Description

technical field [0001] The invention relates to a patterned sapphire substrate, its manufacturing method and a light-emitting diode using the patterned sapphire substrate. Background technique [0002] PSS (Patterned Sapphire Substrate) is a sapphire substrate with a patterned surface formed on a sapphire substrate by photolithography, etching and other processes. On the one hand, the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer, improve the crystal quality and uniformity of the epitaxial material, and then improve the internal quantum luminous efficiency of the light-emitting diode. Scattering changes the optical circuit of the light-emitting diode, thereby increasing the probability of light emission. [0003] In the existing patterned substrates, there is generally a large-area C-plane (that is, the (0001) plane of sapphire). Threading dislocations formed on the C-plane easily extend to the quantum wells of the LED,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20
CPCH01L33/20H01L33/22
Inventor 许圣贤陈功林素慧黄禹杰徐宸科
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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