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Multilayer substrate including GaN layer, method for manufacturing the multilayer substrate including GaN layer, and device

A technology for stacking substrates and manufacturing methods, which is applied in the fields of semiconductor devices, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of high price and difficult to obtain, and achieve the effect of low cost

Inactive Publication Date: 2010-11-24
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this approach also has problems
Although germanium is easier to obtain large-diameter substrates than single-crystal SiC, etc., it is still very expensive and difficult to obtain because germanium is a rare element.

Method used

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  • Multilayer substrate including GaN layer, method for manufacturing the multilayer substrate including GaN layer, and device
  • Multilayer substrate including GaN layer, method for manufacturing the multilayer substrate including GaN layer, and device
  • Multilayer substrate including GaN layer, method for manufacturing the multilayer substrate including GaN layer, and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] (111) germanium is epitaxially grown directly on (111) silicon substrate by chemical vapor deposition method (CVD method) so that the thickness on silicon is about 100 nm, and heat treatment is performed at 800°C. Subsequently, GaN was grown by the MBE method to obtain a GaN film of about 50 nm. When this GaN film was analyzed by X-ray diffraction, a sharp peak at about 380 arcsec was observed, and it was confirmed that a GaN single crystal was growing.

[0056] When the cross-section of the obtained laminated substrate including the GaN layer was observed by TEM (Transmission Electron Microcopy), threading dislocations were not observed in the germanium layer, but dislocations locally existed near the interface between the silicon substrate and the germanium layer.

Embodiment 2

[0058] Use GeH 4 and SiH 4 Gas, grow (111) SiGe layer about 30nm on (111) silicon substrate by chemical vapor deposition method (CVD method), then make (111) germanium layer epitaxial growth, heat treatment at 800 ℃. Subsequently, GaN was grown by the MBE method to obtain a GaN film of about 50 nm. When this GaN film was analyzed by X-ray diffraction, a sharp peak at about 380 arcsec was observed as in Example 1, and it was confirmed that a GaN single crystal was growing.

[0059] When the cross-section of the obtained laminated substrate including the GaN layer was observed by TEM, no threading dislocation was observed in the germanium layer, but dislocations locally existed near the interface between the silicon substrate and the germanium layer.

Embodiment 3

[0061] The same experiment as in Example 2 was performed using an 8-inch (111) silicon substrate.

[0062] The formed GaN film was analyzed by the X-ray analysis method in the central part and the part 1 cm from the peripheral end. No significant difference was observed between the two, but sharp peaks were observed for both.

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Abstract

Provided are a multilayer substrate, which uses a single crystal that can be formed with a large diameter and includes a GaN layer, a method for manufacturing the multilayer substrate, and a device using the multilayer substrate. The method for manufacturing the multilayer substrate includes a germanium growing step of epitaxially growing a germanium layer on a (111) silicon substrate by chemical vapor deposition; a heat treatment step of performing heat treatment to the germanium layer on the obtained silicon substrate within a temperature range of 700-900 DEG C; and a GaN growing step of epitaxially growing the GaN layer on the germanium layer after the heat treatment.

Description

technical field [0001] The present invention relates to a laminated substrate including a GaN layer, a manufacturing method thereof, and a device using the laminated substrate. Background technique [0002] In recent years, GaN has attracted attention for device applications such as light-emitting diodes (LEDs) and heterojunction bipolar transistors (HBTs). In general, GaN bulk crystal growth is extremely difficult and expensive, and the size of the substrate is also 2 to 3 inches, and there is also a problem in that cost reduction is difficult. In order to avoid this problem, GaN used in LEDs uses a substance obtained by heteroepitaxial growth on single crystal SiC or single crystal sapphire. [0003] However, since single-crystal SiC and single-crystal sapphire are also expensive, and there are no large-diameter substrates, popularization is hindered. In addition, there is a large lattice mismatch between these materials and GaN, and it is necessary to provide a buffer l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38H01L21/203H01L21/205H01L33/00
CPCH01L21/0245C30B33/02H01L21/02631C30B29/406H01L21/02433H01L21/0262C30B29/08H01L33/007C30B23/025H01L21/02381H01L21/0254C30B25/183
Inventor 秋山昌次
Owner SHIN ETSU CHEM IND CO LTD
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