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Fabrication method of patterned sapphire substrate

A technology for patterning sapphire and sapphire substrates, used in electrical components, circuits, semiconductor devices, etc.

Active Publication Date: 2017-02-22
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Threading dislocations formed on the C-plane easily extend to the quantum wells of LEDs, leading to non-radiative recombination

Method used

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  • Fabrication method of patterned sapphire substrate
  • Fabrication method of patterned sapphire substrate
  • Fabrication method of patterned sapphire substrate

Examples

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Embodiment Construction

[0030] The specific implementation of the present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings.

[0031] figure 1 Disclosed is a method for fabricating a patterned sapphire substrate, comprising steps S01 to S03, including forming a photomask layer, etching the substrate surface by dry etching, and forming a patterned surface without c-plane by wet etching the substrate surface .

[0032] Step S01: Provide a sapphire substrate having opposite first and second surfaces, and form a patterned mask layer 200 on the first surface, such as figure 2 shown. The details are as follows: First, a layer of photoresist is coated on a flat sapphire substrate, and the thickness of the photoresist can be 0.5um to 3um; next, a pattern composed of a series of columnar photoresist is produced by using a yellow light process. This process can be Using a stepper exposure machine, contact exposure machine, projection exposure mach...

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Abstract

The invention discloses a method for manufacturing a patterned sapphire substrate. The method comprises steps as follows: 1), a sapphire substrate is provided and has a first surface and a second surface which are opposite, and a patterned mask layer is formed on the first surface; 2), a series of bulge structures are formed on the first surface through dry etching, and connecting area between adjacent bulge structures is etched into small convex surfaces; and 3), the first surface of the sapphire substrate is subjected to wet etching, so that the patterned surface is formed, a series of regularly arranged first bulge parts are formed on the patterned surface, each first bulge part has a first size d1, and a connecting area between adjacent first bulge parts is free of a surface C, namely, the surface (0001).

Description

technical field [0001] The invention relates to a patterned sapphire substrate, its manufacturing method and a light emitting diode using the patterned sapphire substrate. Background technique [0002] PSS (Patterned Sapphire Substrate) is a sapphire substrate with a patterned surface formed on a sapphire substrate by photolithography, etching and other processes. On the one hand, the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer, improve the crystal quality and uniformity of the epitaxial material, and then improve the internal quantum luminous efficiency of the light-emitting diode. Scattering changes the optical circuit of the light-emitting diode, thereby increasing the probability of light emission. [0003] In the existing patterned substrates, there is generally a large-area C-plane (that is, the (0001) plane of sapphire). Threading dislocations formed on the C-plane easily extend to the quantum wells of the LED,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/16H01L33/22
CPCH01L33/005H01L33/16H01L33/22H01L2933/0008
Inventor 许圣贤陈功林素慧黄禹杰徐宸科
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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