37results about How to "Good for injection" patented technology

The invention discloses a light emitting diode (LED) lamp optical lens, which comprises a collimation lens, wherein the side face of the collimation lens is a total reflection face; a light outlet face of the collimation lens is provided with a sheet lens; the sheet lens consists of concave faces of a plurality of rectangular concave micro lenses; and the collimation lens is provided with a refraction groove at an end plane opposite to the light outlet face of the collimation lens. Through the combination of the collimation lens and the sheet lens, light which passes through the LED lamp optical lens is softened and distributed uniformly and does not glare and the light source illumination range is expanded.

The invention relates to an organic light-emitting diode (OLED) device which comprises a substrate and an anode, an organic layer and a cathode which are sequentially arranged on the substrate. The cathode is a transparent composite cathode and comprises an alloy layer of low work function metal and silver, a silver layer and an anti-reflection layer arranged on the silver layer. The work function of the low work function metal is smaller than 3.7eV, the molar ratio of the low work function metal and the silver in the alloy layer is 2:1-8:1, the thickness of the alloy layer is 3-11nm, the thickness of the silver layer is 15-30nm, and the thickness of the anti-reflection layer is 30-100nm. Magnesium, lithium, potassium and the like can be wrapped on the periphery of silver atoms when being evaporated with the silver together, the work function of the cathode can be effectively reduced by evaporation in proper proportion, and the cathode cannot absorb a large amount of visible light. The anti-reflection layer increases intensity of transparent light, is large in energy gap and does not affect color purity of the device. The thickness of the alloy layer and the silver layer is low, so that the alloy layer and the silver layer have high light transmittance.

The invention discloses an LED patterned substrate with main patterns and secondary patterns. The patterns on the substrate are composed of the main patterns and the secondary patterns, and the main patterns and the secondary patterns are arranged on the surface of the substrate; the size of each secondary pattern is smaller than that of each main pattern; the secondary patterns are distributed in gaps between the main patterns. The invention further discloses an LED chip comprising the LED patterned substrate with the main patterns and the secondary patterns. Compared with a common LED patterned substrate, the LED patterned substrate with the main patterns and the secondary patterns has the advantages that the patterns on the substrate are denser, the LED chip emits more light beneficially, especially, the more light are emitted out of the top of the chip beneficially, the LED light extraction rate is increased greatly, and a new research and application direction is provided for patterned substrate technologies.

The invention discloses a photothermal-coupled microchannel hydrogen-producing reaction device based on a high-concentration point light source. The device includes the high-concentration point lightsource and the like. During operation of the device, the direction of the high-concentration point light source is vertically downward; a catalyst placing table is placed on the center of the bottom of a reaction chamber and is aligned with the light path of the high-concentration point light source; a catalyst is placed on the catalyst placing table; reactants are added into the reaction chamber;before a reaction, the reaction chamber is purged with an inert gas by using a gas purging channel, then the high-concentration point light source is used for focusing light of different wavelength bands onto the surface of the photothermal catalyst; and after the reaction, a product is collected via a product sampling port and detected. The reaction device of the invention has a small size and is small in the size of each channel, so the point light source can conveniently focus light onto a catalyst carrier, energy flow density is greatly improved, and at the same time, the gathering of strong light carries heat so as to achieve the purpose of producing hydrogen via a photothermal coupled reaction. The photothermal-coupled microchannel hydrogen-producing reaction device of the inventionhas the advantages of simple structure, convenient operation, stable operation, good heat transfer effect, etc.

The invention relates to an imaging lens, a camera device and a portable information terminal device, which can be used to provide an emitting-out pupil far away from the image surface, and is provided with a large-caliber small-sized high performance fixing imaging lens. The imaging lens is provided, from object side to image side, a first lens group (GR1) having the positive refraction ability or the negative refraction ability, a second lens group (GR2) having the positive refraction ability, and a third lens group (GR3) having the positive refraction ability. An aperture (Stop) is disposed between the second lens group and the image surface. The focusing can be realized by fixing the first lens group and moving the second lens group and the third lens group along the optical axis, and the condition can be satisfied, the F2/F3 is less than 1.6 and larger than 0.5, the IFI/F is less than 20.0 and larger than 6.0, wherein the F is the focal length of the whole system of the imaging device by the infinity sharp focus, the F1, the F2, and the F3 are respectively the focal lengths of the first length group, the second length group, and the third length group.

The invention discloses a goat rearing system and belongs to the technical field of goat cultivation. The system comprises a goat house, a feeding module, a pollution discharge module and a stocking module. The goat house comprises four walls, a roof and a leak goat bed; a rotary shaft is arranged on the middle portion of the goat bed, and the rotary shaft can be driven by a motor to drive the goat bed to overturn, so that feces of goats fall into the pollution discharge module; the pollution discharge module comprises a manure pit, a biogas digester, a dung scraper and a cleaner; the manure pit is arranged below the goat bed and communicates with the biogas digester through a pipeline; the dung scraper is arranged on the goat bed, and the cleaner is arranged on the four walls of the goat house and is close the goat bed; the stocking module comprises a stocking portion and a planting portion isolated by a fence, and the stocking portion and the planting portion are separately provided with pipelines communicating the biogas digester. The goat rearing system can be used for immediately cleaning feces of goats, comprehensively utilizing feces of the goats and maintaining the goat house clean.

The invention relates to a 2-methoxy estradiol injectable hydrogel implant which can effectively solve the problems of maintaining the effective concentration of the target part of 2-methoxy estradiol and enhancing the treatment effect. The invention has the technical scheme that a temperature sensitive type PLGA-PEG-PLGA segmented copolymer having temperature sensitive hydrogel properties is adopted to be mixed with water to prepare dissolution swelling solution; the solution is mixed with the 2-methoxy estradiol to prepare an injection; the temperature sensitive type PLGA-PEG-PLGA segmented copolymer is uniformly mixed with the water to be kept stewing at 0 to 25 DEG C; the temperature sensitive type PLGA-PEG-PLGA segmented copolymer is fully dissolved and swelled into the solution; and the 2-methoxy estradiol is added to be uniformly mixed with solution at 0 to 25 DEG C on the use day or one day before use. The invention has scientific formula, easy production, low cost and good injection effect, can effectively maintain the effective concentration of the target part of the 2-methoxy estradiol and enhance the treatment effect is enhanced and is the innovation on the path of cancer treatment drug forms and drug administration.

The invention provides a light emitting diode and a manufacturing method thereof. The method comprises the following steps: preparing a selective growth layer on a surface of a substrate first; then, selectively growing a light emitting structure layer in an epitaxial mode in a non-selective growth layer region of the surface of the substrate, wherein the light emitting structure layer is of an inverted trapezoidal structure and at least includes an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer; etching to an N electrode region with the use of the photo-etching technology, the ICP technology or the RIE technology; making a transparent conductive layer; making a P electrode and an N electrode; preparing a first reflective mirror layer on the transparent conductive layer and preparing a second reflective mirror layer on the other surface of the substrate; and finally, carrying out splintering to complete preparation of the independent light emitting diode. According to the light emitting diode prepared by using the epitaxial selective growth technology, total reflection absorption of a chip to light can be reduced, light can be emitted out from the inside of the light emitting diode, the light extraction efficiency of light on the side wall of the chip is improved, and the excitation efficiency of fluorescent powder is improved and the brightness of the chip is improved due to the adoption of two-way reflective mirrors.

The invention discloses a graphical sapphire substrate, a manufacturing method of the graphical sapphire substrate and the light emitting diode with the substrate. The graphical sapphire substrate is provided with a first surface and a second surface, wherein the first surface and the second surface are opposite, and no C surfaces, namely, 0001 surfaces exist in connection regions between all first protrusion parts. No C surfaces exist on the growth surfaces of the graphical sapphire substrate, and therefore the penetration dislocation density of a gallium nitride epitaxial material on the sapphire substrate is reduced.

The invention discloses a method for manufacturing a patterned sapphire substrate. The method comprises steps as follows: 1), a sapphire substrate is provided and has a first surface and a second surface which are opposite, and a patterned mask layer is formed on the first surface; 2), a series of bulge structures are formed on the first surface through dry etching, and connecting area between adjacent bulge structures is etched into small convex surfaces; and 3), the first surface of the sapphire substrate is subjected to wet etching, so that the patterned surface is formed, a series of regularly arranged first bulge parts are formed on the patterned surface, each first bulge part has a first size d1, and a connecting area between adjacent first bulge parts is free of a surface C, namely, the surface (0001).

The invention discloses a dual-pattern LED patterned substrate. Patterns on the substrate include the hemispherical pattern and the conical pattern. The radius r1 of the bottom circle of the hemispherical pattern is not equal to the radius r2 of the bottom circle of the conical pattern. The invention further discloses an LED chip comprising the dual-pattern LED patterned substrate. The light emitting efficiency of an LED is improved through the combination with the effect of the conical surface of the conical pattern and the spherical surface of the hemispherical pattern on optimizing the LED light emitting efficiency; the patterns on the substrate are dense, and therefore more light rays can be emitted out of the LED chip, especially, more light rays can be emitted out of the top and the bottom of the chip, and the LED light extraction ratio is greatly increased.

The invention discloses an optical lens, a camera module and electronic equipment, and the optical lens comprises a first lens which is sequentially provided with negative focal power from an object side to an image side along an optical axis, wherein the object side surface and the image side surface of the first lens are a concave surface and a convex surface; a second lens with positive focal power, wherein the object side surface and the image side surface of the second lens are a convex surface and a concave surface; a third lens with positive focal power, wherein the image side surface of the third lens is a convex surface; a fourth lens with focal power, wherein the object side surface and the image side surface of the fourth lens are a concave surface and a convex surface; a fifth lens with focal power, wherein the object side surface and the image side surface of the fifth lens are a concave surface and a convex surface; a sixth lens with negative focal power, wherein the object side surface and the image side surface of the sixth lens are a concave surface and a convex surface; a seventh lens with positive focal power, wherein the object side surface of the seventh lens is a convex surface; and an eighth lens with negative focal power, wherein the object side surface and the image side surface of the eighth lens are a convex surface and a concave surface. The optical lens also satisfies the following relational expression: 0.15 mm < TTL/(ImgH * 2)/f < 0.2 mm. According to the optical lens, the camera module and the electronic equipment provided by the embodiment of the invention, the shooting requirements of miniaturization and wide view can be met, and the imaging quality of the electronic equipment is improved.

The invention discloses a composite laser crystal and a laser provided with the composite laser crystal. The composite laser crystal comprises a laser crystal main body, wherein at least one end of the laser crystal main body extends outwards to form a matrix; the matrix comprises a first end surface, a second end surface and a third end surface; the first end surface is connected with the laser crystal main body; the second end surface is vertically connected with the first end surface and is positioned on the same plane with the top of the laser crystal main body; the third end surface is connected with the first and the second end surfaces; an anti-reflection film is arranged on the outer side surface of the third end surface in a plated manner; and a high-reflection film is arranged on the inner side surface of the third end surface in a plated manner. The composite laser crystal adopting the technical scheme has the advantages that the number of optical elements is decreased, the adjustment difficulty of the laser is reduced, and the stability of a system is improved; and since gain media are doped into the laser crystal, laser crystal deformation caused by uneven distribution of heat produced by two end surfaces of the laser crystal main body in the working process can be relieved.

The invention discloses a three-dimensional targeted microwave tumor thermotherapy machine. The machine includes an industrial personnel computer, a microwave output system and a temperature measurement system; the industrial personnel computer is used for controlling starting or shutdown of the temperature measurement system, the temperature measurement system is used for detecting temperature information at a lesion in real time and sending the temperature information to the industrial personnel computer, the industrial personnel computer is used for controlling the output power of the microwave output system according to the temperature information, and the microwave output system is used for microwave thermotherapy of the lesion. According to the three-dimensional targeted microwave tumor thermotherapy machine provided in the embodiment, the temperature measurement system is used for detecting the temperature information of the lesion in real time, the industrial personnel computeris used for controlling the output power of the microwave output system according to the temperature information, and closed-loop control over the temperature and the output power is formed. On one hand, the microwave thermotherapy temperature of the lesion is ensured, and the thermotherapy effect is easily improved; on the other hand, the situation is avoided that the temperature of normal tissue around the lesion is over high in the thermotherapy process, and the safety and reliability of microwave thermotherapy are easily improved.

The embodiment of the invention provides an organic light-emitting device and a method of manufacturing the organic light-emitting device, after the hierarchical structure of the organic light-emitting device is inverted, a transparent organic layer and a conductive layer are further added, and the conductive layer and a reflective cathode layer are in lap joint. By additionally arranging the transparent organic layer, the micro-cavity structure of the organic light-emitting device can be ensured not to be changed basically after being inverted compared with the micro-cavity structure before being inverted, so that photons generated by the light-emitting layer can be emitted out of the organic light-emitting device, and the external quantum efficiency of the inverted organic light-emittingdevice is improved. By additionally arranging the conductive layer, electrons generated by the reflective cathode layer can be injected into the light-emitting layer through the conductive layer, anda problem that the higher voltage needs to be applied due to poor conductivity of the transparent organic layer is solved. Due to the design, normal luminescence of the organic light-emitting deviceunder normal voltage can be realized on the premise of ensuring that the external quantum efficiency of the inverted organic light-emitting device is not reduced basically.

The invention provides a making method of a semiconductor chip. The making method includes steps: A, making an epitaxial layer on a substrate material; B, making a conductive extension layer on the epitaxial layer, wherein the conductive extension layer is made of indium tin oxide according to an indium-tin ratio of 95:5, and coating thickness is 500-1000A; C, etching on the epitaxial layer to form corresponding crystal grain graphs, and exposing steps of a N-type GaN layer, wherein etching depth is 1-2um, and width of a cutting way is 10-30um. Size and width of a metal electrode playing a conductive role are changed to reduce absorption of light so as to achieve the objective of improving external quantum efficiency of the chip.

The invention relates to an optical lens, an image capturing module, an electronic device and a driving device. The optical lens sequentially comprises a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a diaphragm sequentially from an object side to an image side along an optical axis, wherein the first lens element has negative refractive power, the object side surface is a convex surface near the optical axis, and the image side surface is a concave surface near the optical axis; the second lens element has negative refractive power, and the image side surface is a concave surface near the optical axis; the third lens element has positive refractive power; the fourth lens element has refractive power;the fifth lens element has positive refractive power, and the object side surface is a convex surface near the optical axis; the sixth lens element has negative refractive power, and the image side surface is a convex surface near the optical axis; the sixth lens element and the fifth lens element are glued; the diaphragm is arranged on the object side of the first lens element or between the first lens element and the sixth lens element, and the object side face and/or the image side face of at least one of the first lens element to the sixth lens element are/is aspheric. The optical lens canbe balanced in the aspects of expanding the field angle range, ensuring high imaging performance and realizing miniaturization when meeting a specific relation.