3results about How to "High extinction coefficient" patented technology

The application belongs to the field of organic photovoltaics, and relates to a kind of polymer photovoltaic material and its preparation method and application. Double bromide compound A and double side tin compound B are subjected to Stille cross coupling reaction under the action of palladium catalyst, and the polymer photovoltaic material is obtained. The polymer photovoltaic material prepared by the application has an ultra-wide absorption spectrum range from 300 nm to 1200 nm. Such material exhibits an ultra-wide spectral range and a high extinction coefficient, and embodies excellent light absorption capacity. The strong light absorption capacity of the polymer photovoltaic material prepared by the application will help to improve the device efficiency of organic photovoltaics and improve the energy conversion efficiency of the device. The polymer photovoltaic material prepared by the application provides reference value for the design of functional materials in many fields of organic photoelectricity and solar energy utilization and conversion.

The present invention discloses an organic electroluminescent compound and a preparation method thereof, and a light-emitting display panel including the compound. The present invention introduces naphthobenzofuran or naphthobenzofuran compounds, and promotes the formation of a conjugated large plane with other groups while maintaining a high Tg (glass ring transition temperature), thereby achieving a high refractive index. When used as a capping layer of an organic light-emitting display device, the microcavity effect can be adjusted, thereby improving the light extraction efficiency of a top-emitting organic photoelectric device. Moreover, these aromatic amine compounds have a high extinction coefficient before 430nm, which is conducive to the absorption of ultraviolet light, and effectively block water and oxygen in the external environment, protecting the OLED display panel from water and oxygen erosion, and there is almost no absorption after 430nm, ensuring the light extraction efficiency, thereby realizing a high-efficiency, long-life organic EL element.

Provided is a method for forming a silicon film capable of adjusting film stress while maintaining optical characteristics. A target (3) made of a silicon material and a film formation object (Sw) are arranged in a vacuum chamber (1). Sputtering gas is introduced into a vacuum chamber of a vacuum atmosphere, power is applied to a target, and a silicon film (Sf) is formed on the surface of a film formation object by a sputtering method. In this case, the formation of the silicon film is performed in a first step in which a first silicon film (Sf1) having a columnar structure is formed, and a second step in which a second silicon film (Sf2) having a higher film density than the first silicon film is formed in a columnar structure.