Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing patterned sapphire substrate

A technology for patterning sapphire and sapphire substrates, which is applied to electrical components, circuits, semiconductor devices, etc.

Active Publication Date: 2015-04-01
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Threading dislocations formed on the C-plane easily extend to the quantum wells of LEDs, leading to non-radiative recombination

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing patterned sapphire substrate
  • Method for manufacturing patterned sapphire substrate
  • Method for manufacturing patterned sapphire substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The specific implementation of the present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings.

[0031] figure 1 Disclosed is a method for fabricating a patterned sapphire substrate, comprising steps S01 to S03, including forming a photomask layer, etching the substrate surface by dry etching, and forming a patterned surface without c-plane by wet etching the substrate surface .

[0032] Step S01: Provide a sapphire substrate having opposite first and second surfaces, and form a patterned mask layer 200 on the first surface, such as figure 2 shown. The details are as follows: First, a layer of photoresist is coated on a flat sapphire substrate, and the thickness of the photoresist can be 0.5um to 3um; next, a pattern composed of a series of columnar photoresist is produced by using a yellow light process. This process can be Using a stepper exposure machine, contact exposure machine, projection exposure mach...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for manufacturing a patterned sapphire substrate. The method comprises steps as follows: 1), a sapphire substrate is provided and has a first surface and a second surface which are opposite, and a patterned mask layer is formed on the first surface; 2), a series of bulge structures are formed on the first surface through dry etching, and connecting area between adjacent bulge structures is etched into small convex surfaces; and 3), the first surface of the sapphire substrate is subjected to wet etching, so that the patterned surface is formed, a series of regularly arranged first bulge parts are formed on the patterned surface, each first bulge part has a first size d1, and a connecting area between adjacent first bulge parts is free of a surface C, namely, the surface (0001).

Description

technical field [0001] The invention relates to a patterned sapphire substrate, its manufacturing method and a light emitting diode using the patterned sapphire substrate. Background technique [0002] PSS (Patterned Sapphire Substrate) is a sapphire substrate with a patterned surface formed on a sapphire substrate by photolithography, etching and other processes. On the one hand, the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer, improve the crystal quality and uniformity of the epitaxial material, and then improve the internal quantum luminous efficiency of the light-emitting diode. Scattering changes the optical circuit of the light-emitting diode, thereby increasing the probability of light emission. [0003] In the existing patterned substrates, there is generally a large-area C-plane (that is, the (0001) plane of sapphire). Threading dislocations formed on the C-plane easily extend to the quantum wells of the LED,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/16H01L33/22
CPCH01L33/005H01L33/16H01L33/22H01L2933/0008
Inventor 许圣贤陈功林素慧黄禹杰徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com