Method for manufacturing patterned sapphire substrate

Abstract

The invention discloses a method for manufacturing a patterned sapphire substrate. The method comprises steps as follows: 1), a sapphire substrate is provided and has a first surface and a second surface which are opposite, and a patterned mask layer is formed on the first surface; 2), a series of bulge structures are formed on the first surface through dry etching, and connecting area between adjacent bulge structures is etched into small convex surfaces; and 3), the first surface of the sapphire substrate is subjected to wet etching, so that the patterned surface is formed, a series of regularly arranged first bulge parts are formed on the patterned surface, each first bulge part has a first size d1, and a connecting area between adjacent first bulge parts is free of a surface C, namely, the surface (0001).

Description

technical field [0001] The invention relates to a patterned sapphire substrate, its manufacturing method and a light emitting diode using the patterned sapphire substrate. Background technique [0002] PSS (Patterned Sapphire Substrate) is a sapphire substrate with a patterned surface formed on a sapphire substrate by photolithography, etching and other processes. On the one hand, the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer, improve the crystal quality and uniformity of the epitaxial material, and then improve the internal quantum luminous efficiency of the light-emitting diode. Scattering changes the optical circuit of the light-emitting diode, thereby increasing the probability of light emission. [0003] In the existing patterned substrates, there is generally a large-area C-plane (that is, the (0001) plane of sapphire). Threading dislocations formed on the C-plane easily extend to the quantum wells of the LED,...

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