A kind of large single crystal graphene and preparation method thereof

A single crystal graphene, polymethyl methacrylate technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the adverse effects of electrical properties, the small size of the single crystal domain area, the oxidation group Doping and other problems, to achieve the effect of simple and effective preparation method, reduced nucleation density, and high quality of single crystal

Active Publication Date: 2017-02-22
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

(Currently used in industry) Graphene produced by the redox method usually has a domain area of ​​tens of microns, and the graphene prepared by this method has many defects due to the chemical reduction reaction process, and it is difficult to completely reduce the oxidized groups. This leads to serious doping, which seriously limits its application in the field of electronics.
The chemical vapor deposition method is suitable for large-scale preparation of graphene film materials, but the single crystal domain size of the graphene film prepared by the traditional chemical vapor deposition method is relatively small, usually at the micron level, and a large number of grain boundary pairs in the graphene film its electrical properties adversely affect

Method used

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  • A kind of large single crystal graphene and preparation method thereof
  • A kind of large single crystal graphene and preparation method thereof
  • A kind of large single crystal graphene and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Embodiment 1, prepare large single crystal graphene

[0051] (1) Use dilute hydrochloric acid with a mass fraction of 5% and deionized water to clean the copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm) in sequence, place the copper foil in a casing with a magnetic control device, and then Put the casing in a tube furnace, under a hydrogen atmosphere with a flow rate of 100 sccm, and a system pressure of 100 Pa, raise the temperature of the furnace body to 1020°C and keep it for 30 minutes;

[0052] (2) Keep the temperature of the furnace body at 1020°C, turn off the hydrogen flow, and feed in the argon gas with a flow rate of 100 sccm. At the same time, heat 2 g of melamine solids (Bailingwei Company, purity 99.8%) in the heating belt, and set the temperature of the heating belt at 120° C. , the system pressure is 100Pa, the treatment time is 10min, and the treatment of the copper foil surface is completed;

[0053] (3) Keep the t...

Embodiment 2

[0060] Embodiment 2, prepare large single crystal graphene

[0061] (1) Using phosphoric acid and ethylene glycol solution with a mass ratio of 3:1 as the electrolyte, copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm) was connected to the positive electrode, and polished at a DC current of 0.5 A for 30 min. Put the copper foil in a sleeve with a magnetic control device, then place the sleeve in a tube furnace, raise the temperature of the furnace body to 1020°C under a hydrogen atmosphere with a flow rate of 300 sccm, and keep the system pressure at 300 Pa. 50min;

[0062] (2) Keep the temperature of the furnace body at 1020°C, turn off the hydrogen flow, and feed in the argon gas with a flow rate of 500 sccm. At the same time, heat 2 g of melamine solids (Bailingwei Company, purity 99.8%) in the heating belt, and set the temperature of the heating belt at 120° C. , the system pressure is 500Pa, the treatment time is 10min, and the treatme...

Embodiment 3

[0069] Embodiment 3, prepare large single crystal graphene

[0070] (1) Using phosphoric acid and ethylene glycol solution with a mass ratio of 3:1 as the electrolyte, copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm) was connected to the positive electrode, and polished at a DC current of 0.5 A for 30 min. Put the copper foil in a sleeve with a magnetic control device, then place the sleeve in a tube furnace, and raise the temperature of the furnace body to 1020°C under a hydrogen atmosphere with a flow rate of 100 sccm, and keep the system pressure at 100 Pa. 30min;

[0071] (2) Keep the temperature of the furnace body at 1020°C, turn off the hydrogen flow, and feed in the argon gas with a flow rate of 500 sccm. At the same time, heat 2 g of melamine solids (Bailingwei Company, purity 99.8%) in the heating belt, and set the temperature of the heating belt at 120° C. , the system pressure is 500Pa, the treatment time is 10min, and the tre...

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Abstract

The invention relates to a large single crystal graphene and preparation method thereof. The preparation method comprises the following steps: 1) annealing a copper base under reducing atmosphere to obtain annealed copper base; 2) under triazine derivative steam atmosphere, treating the copper base annealed after the annealing treatment in the step 1) to obtain the copper base after the triazine derivative treatment, wherein the triazine derivative is selected from at least one of tripolycyanamide, 2,4-diamino-6-methyl-1,3,5-triazine, and 2-amino-4-methyl-6-methoxy-1,3,5-triazine; 3) depositing graphene on the surface of the copper base subjected to triazine derivative biological treatment by adopting a chemical vapor deposition method to obtain the large single crystal graphene. The preparation method is simple and suitable for large-scale production, the single crystal domain size achieves sub-centimeter level, and the single crystal quality is high and can be applied to the electronics.

Description

technical field [0001] The invention belongs to the field of graphene preparation, and in particular relates to a large single crystal graphene and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional film material formed by a single layer of carbon atoms arranged in a hexagonal symmetrical honeycomb structure. Due to the excellent properties of graphene in electricity, optics, heat and mechanics, it has attracted extensive attention in the fields of physics, chemistry, biology and materials since its discovery. The single-layer carbon atoms in graphene are arranged in a hexagonal lattice, resulting in a Dirac tapered band structure, and the energy and momentum at the Fermi level have a linear dispersion relationship. This energy band structure determines that graphene has extremely high electron and hole mobility, which is more than two orders of magnitude higher than that of traditional silicon materials, so graphene has gradually beco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/00
CPCC30B25/00C30B29/02
Inventor 刘忠范林立彭海琳任华英
Owner PEKING UNIV
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