Gan-based LED array microdisplay device and manufacturing method thereof

A technology of LED arrays and micro-display devices, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of resolution limitation, affecting device luminous efficiency, damage to micro-LED chip lattice, etc., and achieve ultra-low power consumption , low leakage current, ultra-high resolution effect

Active Publication Date: 2018-04-20
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Limited by the precision of the ICP etching process, it is difficult to make the size of the light-emitting pixel of the display device made by this method smaller, so the resolution is limited to a certain extent, and it does not meet the development needs of miniaturization and clarity in the future.
On the other hand, ICP etching will cause a large amount of lattice damage on the surface of the micro LED chip, introduce a large number of leakage channels, and affect the luminous efficiency of the device

Method used

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  • Gan-based LED array microdisplay device and manufacturing method thereof
  • Gan-based LED array microdisplay device and manufacturing method thereof
  • Gan-based LED array microdisplay device and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0033] Attached figure 1 Among them, 1-sapphire substrate, 2-striped masking film, 3-striped structure n-type GaN array, 4-masking film with periodically arranged openings, 5-pyramid structure micro LED array, 6 Strip-shaped transparent conductive layer, 7-positive electrode, 8-negative electrode.

[0034] Such as figure 1 As shown, a method for preparing a GaN-based LED array microdisplay device based on selective area epitaxial growth technology is provided, which includes the following steps:

[0035] (A): Deposit 100 nm thick SiO on sapphire substrate 2 Dielectric masking film, by wet etching method to remove SiO 2 The dielectric masking film is prepared as a masking film arranged in strips with a window area of ​​10 μm wide and 5 μm apart;

[0036] (B): Through the selective area epitaxial growth technology of MOCVD, the SiO 2 An n-type GaN array with a strip structure is epitaxially grown on the window area of ​​the masking film;

[0037] (C): Depositing 100 nm thick SiO on the ...

Embodiment 2

[0043] Attached figure 2 Among them, 1-sapphire substrate, 3-1-n-type GaN epitaxial layer, 4-masking film with periodically arranged openings, 5-pyramid structure micro LED array, 6-strip transparent conductive layer, 7-positive Electrode, 8-negative electrode, 9-column interconnecting conductive layer.

[0044] Such as figure 2 As shown, a method for preparing a GaN-based LED array microdisplay device based on selective area epitaxial growth technology is provided, which includes the following steps:

[0045] (A) An n-type GaN epitaxial layer with a thickness of 2 μm was epitaxially grown on a sapphire substrate by MOCVD, and the n-type GaN epitaxial layer was etched into arrays and isolated from each other by ICP dry etching. Bulk n-type GaN epitaxial layers, the size of each bulk n-type GaN epitaxial layer is 12x12 μm, and the spacing between each other is 3 μm;

[0046] (B) On each bulk n-type GaN epitaxial layer, a masking film with periodically arranged openings is made, and...

Embodiment 3

[0050] Embodiment 3 adopts the epitaxial structure, device structure, and manufacturing process that are basically the same as those of Embodiment 1, wherein the pyramid structure micro LED array in Embodiment 1 is replaced with the hexagonal truncated pyramid-shaped micro LED array in Embodiment 3.

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Abstract

The invention discloses a GaN-based light emitting diode (LED) array micro display device and a fabrication method thereof based on a selective region epitaxial growth technique. The fabrication method of the device comprises the following steps of: (A) fabricating mask membranes arranged in a strip shape on a substrate, and growing a strip-structurized n-type GaN array through the selective region epitaxial growth technique; (B) fabricating a mask membrane provided with periodically-distributed opening holes on the strip-structurized n-type GaN array, and growing a three-dimensional structurized miniature LED array through the selective region epitaxial growth technique; (C) fabricating a strip-shaped transparent conductive layer on the surface of the three-dimensional structurized miniature LED array; and (D) respectively fabricating a negative electrode and a positive electrode on the strip-structurized n-type GaN array and the strip-shaped transparent conductive layer. According to the method, the selective region epitaxial growth technique is used for growing a GaN-based miniature LED, the problem of current leakage caused by a dry etching method for fabrication the miniature LED is solved, and a miniature display device having matrix addressing, low power consumption and high brightness is provided.

Description

Technical field [0001] The invention belongs to the field of semiconductor light emitting devices, and relates to a micro display device, in particular to a GaN-based LED array micro display device based on selective area epitaxial growth technology and a manufacturing method thereof. Background technique [0002] Group III nitrides GaN, AlN (band gap width 6.2eV), InN (band gap width 0.7eV) and their alloys have a band gap that covers the energy range from infrared to visible light and ultraviolet light. Therefore, in semiconductor light-emitting devices The field has a wide range of applications. In recent years, with the development of the electronics industry and the progress of industrial technology, micro light-emitting devices based on group III nitrides have developed rapidly, opening up new application areas for group III nitride-based light-emitting devices. [0003] At present, micro-display devices have become a focus of attention in various countries due to their uniq...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L33/00H01L33/20H01L27/15
CPCH01L27/153H01L33/007H01L33/20
Inventor张佰君陈伟杰
OwnerSUN YAT SEN UNIV