Trench Schottky Diodes

Abstract

The invention relates to a trench type Schottky diode. The trench type Schottky diode comprises a substrate, an n-type epitaxy layer, multiple p-type semiconductor layers, multiple oxidization layers, a first electrode connected with the substrate and a second electrode connected with the n-type epitaxy layer, wherein the n-type epitaxy layer is arranged on the substrate and comprises multiple trenches, the semiconductor layers are respectively arranged in the trenches, a material work function of each semiconductor layer is greater than or equal to 4.8 electron volts, and the oxidization layers are respectively arranged in the trenches and are respectively arranged between one semiconductor layer and the epitaxy layer. The p-type semiconductor layers having high work functions are filled into the trenches, so the relatively excellent forward bias characteristic is realized, the trench type Schottky diode can not only stand high reverse bias, but also has excellent forward bias characteristic, moreover, the trench type Schottky diode further has an advantage of rapid Schottky element switching.

Description

technical field [0001] The invention relates to a diode, in particular to a trench Schottky diode combined with a Schottky junction. Background technique [0002] refer to figure 1 , is an existing trench Schottky diode, comprising: a substrate 11, an epitaxial layer 12 located on the substrate 11, several semiconductor layers 13, several oxide layers 14, a first electrode 15, and a second electrode 16 . The substrate 11 is an n-type silicon substrate. The epitaxial layer 12 is an n-type semiconductor, and has a plurality of trenches 121 spaced apart from each other and recessed downward from its top surface. The semiconductor layer 13 fills the trenches 121 respectively, and its material is n-type polysilicon. The oxide layers 14 are respectively located in the trenches 121 , and are respectively located between each semiconductor layer 13 and the epitaxial layer 12 . The first electrode 15 is located on the bottom surface of the substrate 11 . The second electrode 16...

AI Technical Summary

Problems solved by technology

However, it has been found in practice that when the trench Schottky diode with the above structure is made as a component that can withstand high reverse bias voltage (that is, has a high breakdown voltage (Breakdown Voltage)), its forward bias characteristic will be lower. In other words, the forward bias voltage required to produce the same current must be increased

Therefore, the trench Schottky diode needs to be improved

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