A method for assessing failure rate of mmc
A failure rate and failure model technology, applied in the direction of instruments, AC network circuits, electrical components, etc., can solve the problems of not fully reflecting the reliability of MMC circuits, so as to improve the accuracy of fault estimation, the accuracy of failure rate and average life, and improve the estimation reliability effect
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2018-09-25
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Abstract
Description
technical field
[0001] The invention relates to a failure rate evaluation method, in particular to an MMC failure rate evaluation method, and belongs to the field of power system reliability evaluation. Background technique
[0002] Modular Multilevel Converter (MMC), since it was proposed by German scholar R. Marquardt in 2002, has been widely concerned and researched by scholars from various countries because of its unique advantages in high-voltage and high-power applications. Mainly concentrated in the fields of HVDC, power quality control and AC drive, especially the primary choice of HVDC converters.
[0003] There are multiple sub-modules in the modular multi-level converter MMC. The reliability of the sub-modules greatly affects the overall reliability of the MMC. The failure of a sub-module will affect the normal operation of the MMC converter. Therefore, it is necessary to study the failure rate of the MMC. necessary.
[0004] In the traditional failure rate eval...
Examples
Embodiment Construction
[0040] Below in conjunction with accompanying drawing of description, the present invention will be further described.
[0041] The invention provides a failure rate evaluation method of MMC, such as figure 1 shown, including the following steps:
[0042] 1) Obtain the submodule and submodule assembly of the MMC circuit;
[0043] Such as figure 2 Shown is the MMC circuit topology diagram, in which each box represents a sub-module, the sub-module adopts the structure of a half-bridge sub-module, and the sub-module components in each sub-module include IGBT, capacitor and diode.
[0044] The main cause of sub-module failure is the damage of power electronic devices. The overload capacity of power electronic devices such as IGBT and diodes is weak. Overvoltage, overcurrent or excessive voltage and current rise rate may cause damage to power electronic devices, and capacitor Damage and trigger control failure etc. The failure of the sub-module will cause the oscillation of DC...