Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for increasing the high temperature thermoelectric potential of layered cobalt-based oxide films

A technology of oxide thin film and thermoelectric potential, which is applied in the direction of coating, metal material coating process, ion implantation plating, etc., can solve the problems of reduced electrical conductivity, little improvement effect, and decline, so as to increase high temperature thermoelectric potential Effect

Active Publication Date: 2018-08-10
KUNMING UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Partial A-site or Co-site doping can improve A 3 co 4 o 9 The thermoelectric potential, but its improvement effect is very small, and doping often leads to a decrease in conductivity, so that ZT does not increase much, or even decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for increasing the high temperature thermoelectric potential of layered cobalt-based oxide films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The method for increasing the high-temperature thermoelectric potential of the layered cobalt-based oxide film described in this embodiment specifically includes the following steps:

[0018] (1) LaAlO tilted at 5° 3 (001) The single crystal substrate was first annealed in air atmosphere at 1000°C for 1 hour, then treated with acetone, alcohol and deionized water in an ultrasonic cleaner at room temperature for 2 minutes each, and then secondly annealed in air atmosphere at 1000°C Anneal 1h.

[0019] (2) Using pulsed laser deposition technology, the KrF excimer laser with a wavelength of 248nm and a pulse width of 28ns was used as the light source, with a laser energy of 175mJ, a laser frequency of 5Hz, and a background vacuum of 1×10 -3 Pa, growth temperature 780°C, flowing oxygen pressure 30Pa, growth time 5min is the growth process, and Ca is grown on the single crystal substrate obtained in step (1). 3 co 4 o 9 film.

[0020] The schematic diagram of the epitax...

Embodiment 2

[0022] The method for increasing the high-temperature thermoelectric potential of the layered cobalt-based oxide film described in this embodiment specifically includes the following steps:

[0023] (1) LaAlO tilted by 10° 3 (001) The single crystal substrate was first annealed in air atmosphere at 950°C for 2 hours, then treated with acetone, alcohol and deionized water in an ultrasonic cleaner at room temperature for 2 minutes each, and then secondly annealed in air atmosphere at 950°C Anneal 2h.

[0024] (2) Using pulsed laser deposition technology, the KrF excimer laser with a wavelength of 248nm and a pulse width of 28ns was used as the light source, with a laser energy of 200mJ, a laser frequency of 4Hz, and a background vacuum of 1×10 -3 Pa, growth temperature of 780°C, flow oxygen pressure of 30Pa, and growth time of 7.5min are the growth process. Ca is grown on the single crystal substrate obtained in step (1). 3 co 4 o 9 film. The thermoelectric potential S≈550μ...

Embodiment 3

[0026] The method for increasing the high-temperature thermoelectric potential of the layered cobalt-based oxide film described in this embodiment specifically includes the following steps:

[0027] (1) LaAlO tilted at 30° 3 (001) The single crystal substrate was annealed once in air atmosphere at 1150°C for 0.5h, and then treated with acetone, alcohol and deionized water in an ultrasonic cleaner for 2min at room temperature, and then in air atmosphere at 1150°C for a second time. Second annealing 0.5h.

[0028] (2) Using pulsed laser deposition technology, the KrF excimer laser with a wavelength of 248nm and an excitation pulse width of 28ns was used as the light source, with a laser energy of 250mJ, a laser frequency of 3Hz, and a background vacuum of 1×10 -3 Pa, growth temperature of 780°C, flow oxygen pressure of 30Pa, and growth time of 10min are the growth process, and Ca is grown on the single crystal substrate obtained in step (1). 3 co 4 o 9 film. The thermoelect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for increasing high-temperature thermoelectric potential of layered cobalt-based oxide films and belongs to the field of functional film materials. The method is characterized in that layered cobalt oxide epitaxial films are prepared by depositing pulse laser on a single-crystal substrate tilting to the c-axis, and increased high-temperature thermoelectric potential is obtained on the tilt direction of the films. With the method, the high-temperature potential of the layered cobalt-based oxide films can be obviously increased, and the method is good in repeatability and easy to implement.

Description

technical field [0001] The invention discloses a method for increasing the high-temperature thermoelectric potential of a layered cobalt-based oxide film, which belongs to the field of functional film materials. Background technique [0002] Split layer structure A 3 co 4 o 9 (A=Ca, Sr) has attracted extensive attention due to its stable physical and chemical properties under high temperature and oxidizing environment, low cost of raw materials, and non-toxicity. Its crystal structure consists of conductive CoO 2 layers and insulation of a 2 CoO 3 layers alternately stacked along the c-axis and mismatched along the b-axis, CoO 2 Low-spin Co in the layer 4+ ( ) provides hole carriers, and strongly localizes the thermal and electrical transport in the ab plane, A 2 CoO 3 The layer acts as a phonon scattering center to effectively reduce the thermal conductivity of the material, making it have the characteristics of "electronic crystal-phonon glass" and significant...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08C23C14/02
CPCC23C14/02C23C14/08C23C14/28
Inventor 宋世金虞澜傅佳倪佳邱兴煌陈琪钟毅
Owner KUNMING UNIV OF SCI & TECH