Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistive random access memory and manufacturing method thereof

A resistive random, manufacturing method technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problem of incomplete reset and achieve the effect of improving durability

Active Publication Date: 2017-11-28
WINBOND ELECTRONICS CORP
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the oxygen ions have diffused outward in the titanium layer, there will be a problem of not being able to completely reset

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In order that the concept of the invention may be more fully appreciated, reference is made herein to the accompanying drawings, in which embodiments of the invention are shown. However, the invention may also be practiced in many different forms and should not be construed as limited to the embodiments set forth below. Rather, the embodiments are provided only so that the present invention will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0051] In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.

[0052] figure 1 It is a cross-sectional view of the resistive random access memory according to the first embodiment of the present invention.

[0053] Please refer to figure 1 , the resistive random access memory includes a lower electrode 102 , an upper electrode 104 , a variable resistance layer 106 , an oxygen storage layer 108 and a reactive oxygen bar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises a low electrode, an upper electrode, a variable resistance layer, an oxygen storage layer and a reactive oxygen blocking layer, wherein the lower part is arranged on a substrate, the upper electrode is arranged on the lower electrode, the variable resistance layer is arranged between the lower electrode and the upper electrode, the oxygen storage layer is arranged between the variable resistance layer and the upper electrode, and the reactive oxygen blocking layer is arranged in the oxygen storage layer. By arranging the reactive oxygen blocking layer, the reset characteristic and the durability of a memory component can be improved, and moreover, the yield and the stability of the memory component can be improved.

Description

technical field [0001] The invention relates to a non-volatile memory, in particular to a resistive random access memory and a manufacturing method thereof. Background technique [0002] Resistive random access memory (RRAM) is a type of non-volatile memory. Because resistive random access memory has the advantages of low write operation voltage, short write and erase time, long memory time, non-destructive read, multi-state memory, simple structure and small required area, it will be available in the future It has become one of the non-volatile memory components widely used in personal computers and electronic equipment, so it is currently being extensively studied. [0003] In general, RRAM includes a metal-insulator-metal (MIM) structure composed of upper electrodes, lower electrodes and a resistance changeable layer interposed therebetween. [0004] When a positive bias is applied to the variable resistance layer, oxygen ions are attracted by the positive bias to leave...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/00H10N70/20H10N70/801H10N70/011
Inventor 陈达
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com