Coaxial feed structure with dynamically and continuously adjustable impedance based on graphene and two-dimensional semiconductors

A two-dimensional semiconductor, coaxial feeding technology, applied in the direction of the antenna grounding switch structure connection, circuit, electrical components, etc.

Pending Publication Date: 2018-07-06
SHENZHEN UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the current standard antenna impedance of 50 ohms, when the trend of nano-devices and nano-structure antennas comes in the future, high-impedance applications and matching will become a possibility and trend

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Coaxial feed structure with dynamically and continuously adjustable impedance based on graphene and two-dimensional semiconductors
  • Coaxial feed structure with dynamically and continuously adjustable impedance based on graphene and two-dimensional semiconductors
  • Coaxial feed structure with dynamically and continuously adjustable impedance based on graphene and two-dimensional semiconductors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description serve to explain the principles of the application.

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, In other words, other drawings can also be obtained from these drawings on the premise of not paying creative work.

[0028] figure 1 100 examples of an impedance-tunable coaxial feed structure design. 101 identifies a graphene layer, which serves as the core of the coaxial structure, and its interior can be air or a dielectric material. 103 is a molybdenum disulfide layer, 102 and 104 are filled with dielectric materials, inclu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of dynamic continuously adjustable coaxial feed structures, and specifically discloses a coaxial feed structure with dynamically and continuously adjustable impedance based on graphene and two-dimensional semiconductors. The coaxial feed structure is composed of the two-dimensional conductors such as the graphene, molybdenum disulfide and like, and a single layer, a double layer or multiple layers of the two-dimensional semiconductors, and includes an intermediate dielectric structure layer. The coaxial feed structure further forms a diode and a field effect transistor, and is characterized in that functions of dynamically and continuously adjustable impedance RF impedance, impedance matching and impedance reconstruction of the coaxial structureare achieved by an applied electric field.

Description

technical field [0001] The present application relates to the technical field of a dynamically continuously adjustable coaxial feed structure, in particular to a dynamically continuously adjustable coaxial feed structure based on graphene and two-dimensional semiconductor impedance. Background technique [0002] Graphene is a single atomic layer metamaterial with many excellent electrical, thermal, mechanical and other material properties and broad application prospects, especially in the fields of electronics, communications and smart devices. Graphene is currently known as the material with the best electrical conductivity and has a unique energy band structure. Both theory and experiments have proved that the Fermi level of graphene can be increased or decreased by means of external electric field, doping, etc., and the conductivity of graphene materials can be effectively regulated. In particular, the unique performance of conductance tunability achieved by applied volt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/50H01Q21/00H01P1/202
CPCH01Q1/50H01P1/202H01Q21/0006
Inventor 钱正芳张文静张秀文桂成群舒国响
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products