Electric Entropy Memory Devices

Abstract

Embodiments of electro-entropy memory devices comprising arrays of electro-entropy storage devices (EESDs), and methods of making and using the electro-entropy memory devices are disclosed herein. The memory device includes a plurality of address lines arranged in rows to select a row of EESDs, and a plurality of data lines arranged in columns to select a column of EESDs, wherein each EESD is coupled in series on a side connected to the EESDs between the address lines and the data lines that are connected to the opposite side of the EESD. The memory device may have a stacked architecture including multiple layers of address lines, data lines and EESD. The disclosed electroentropy memory devices can operate in both ROM and RAM modes. The EESD in the disclosed electroentropy memory devices can include 2-4096 logic states, and / or have 0.001 kb / cm 3 up to 1024TB / cm 3 density of.

Description

[0001] This application claims the benefit of the earlier filing date of US Provisional Application No. 62 / 252,216, filed November 6, 2015, which is hereby incorporated by reference in its entirety. technical field [0002] The present disclosure relates to embodiments of electroentropy memory devices and methods of making and using such devices. Background technique [0003] The field of microelectronics and related technologies is a rapidly expanding market for new products and innovative technologies. The development of more than 50 years has significantly achieved products that the prophets could not have foreseen fifty years ago. The rapid evolution of products in these markets has been attributed in part to the incredible development of microelectronics for computers and other logic devices. In these computers and logic devices, the main components are memory devices for executing programs and storing data. [0004] Two general types of data storage devices are curre...

AI Technical Summary

Problems solved by technology

However, conventional memory devices suffer from the difficulty of requiring complex transistor systems to control data retention and facilitate fast energy state switching

[0005] The main disadvantage of RAM devices is that data stored within the memory cells of the chip is lost when power is removed

Another disadvantage is that RAM devices are expensive compared to their ROM counterparts

A further disadvantage is that as RAM memory devices decrease in size to achieve higher data storage densities, their ability to be manufactured and used with high reliability decreases

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