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A method of reducing the resistance deviation of the head and tail of the whole ingot of polysilicon target

A polysilicon and target technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as unqualified resistivity, large difference in resistivity between head and tail, and inability to achieve the best state.

Active Publication Date: 2020-12-08
QINGDAO BLUE LIGHT NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the segregation coefficient of boron is 0.8, and there is still a segregation phenomenon in the silicon ingot, which leads to a large difference in the resistivity between the head and the tail, which cannot meet the requirements of the best state, resulting in unqualified resistivity in some areas.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A method for reducing the resistance deviation of the head and tail of a polysilicon target, using a boron-phosphorus double compensation method, specifically includes the following steps:

[0016] (1) Add 0.1g of high-purity boron powder with a purity of 5N to 800kg of silicon material, and at the same time add 0.05g of high-purity phosphorus powder with a purity of 5N, put the above-mentioned raw materials into a crucible, and fill the crucible from bottom to top Boron powder, silicon material, phosphorus powder;

[0017] (2) Put the loaded raw materials in a polysilicon ingot furnace, evacuate to below 10Pa, and heat to 1500°C until all the silicon materials are melted;

[0018] (3) After the silicon material is completely melted, gradually lower the temperature to 1410°C within 0.5 hours, and gradually open the heat insulation cage for 0.3cm / h to realize the directional solidification of the silicon material;

[0019] (5) After the crystal growth is completed, it i...

Embodiment 2

[0022] The steps of a method for reducing the resistance deviation at the head and tail of a polysilicon target described in this embodiment are the same as those in Embodiment 1, and the different technical parameters are:

[0023] 1. In step (1), add 0.45g of high-purity boron powder with a purity of 5N in the 850kg silicon material, and add 0.25g of high-purity phosphorus with a purity of 5N simultaneously;

[0024] 2. Heating to 1525°C in step (2);

[0025] 3. In step (3), after gradually cooling down to 1415°C within 0.75h, gradually open the heat insulation cage for 0.4cm / h.

Embodiment 3

[0027] The steps of a method for reducing the resistance deviation at the head and tail of a polysilicon target described in this embodiment are the same as those in Embodiment 1, and the different technical parameters are:

[0028] 1. In step (1), add 0.8g of high-purity boron powder with a purity of 5N in 900kg of silicon material, and add 0.4g of high-purity phosphorus with a purity of 5N simultaneously;

[0029] 2. Heating to 1550°C in step (2);

[0030] 3. In step (3), after gradually cooling down to 1420°C within 1 hour, gradually open the heat insulation cage by 0.5cm / h.

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Abstract

The invention relates to the technical field of polycrystalline silicon target casting and especially relates to a method of reducing the resistance deviation between a head and a tail of a whole ingot of a polycrystalline silicon target. Through a boron / phosphorus dual-compensation method, the resistance interval range of the whole ingot is achieved since the segregation coefficients of boron andphosphorus in silicon liquid are different and the method can cause controllable change on the resistivity.

Description

technical field [0001] The invention relates to the technical field of polysilicon target casting, in particular to a method for reducing the resistance deviation at the head and tail of a polysilicon target. Background technique [0002] At present, in the casting process of polysilicon targets, boron compensation is mainly used to control the resistivity range. Under normal segregation conditions, when the resistivity is required to be 1-2, the head-to-tail resistivity deviation is between 0.5-0.8, while for For polysilicon target products, the best state is that the resistivity of the head and tail is basically the same. However, the segregation coefficient of boron is 0.8, and there is still segregation phenomenon in the silicon ingot, which leads to a large difference in resistivity between the head and the tail, which cannot meet the requirements of the best state, resulting in substandard resistivity in some areas. Contents of the invention [0003] In order to ove...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06C30B33/02C23C14/34
CPCC23C14/3414C30B28/06C30B29/06C30B33/02
Inventor 王峰张磊姚玉杰谭毅
Owner QINGDAO BLUE LIGHT NEW MATERIAL CO LTD
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