Semiconductor laser device and manufacturing method

Abstract

The invention discloses a semiconductor laser device and a manufacturing method thereof, and solves the problems including slow wavelength switching, large power loss, large structural size and high manufacture cost of present devices and methods. The device comprises an active layer, a buffer layer, P electrodes, electric isolators, a large chirping grating and an N electrode, each electric isolator is positioned between the adjacent P electrodes, the large chirping grating is a linear chirping grating positioned under the P electrodes, phase shift units are uniformly inserted into the largechirping grating, the number of the phase shift units is the same with that of the P electrodes, each phase shift unit corresponds to one P electrode, the large chirping grating is used to form a multi-longitudinal-mode resonant cavity, the minimum and maximum of the longitudinal mode lasing work wavelength corresponding to the multi-longitudinal-mode resonant cavity correspond to the minimal andmaximal periods of the large chirping grating respectively, the active layer is positioned under the large chirping grating, the buffer layer is positioned under the active layer, and the N electrodeis positioned under the buffer layer. The method is used to manufacture the device. The problem in rapid laser wavelength switching cannot solved.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a semiconductor laser device and a manufacturing method. Background technique [0002] In the field of optoelectronic technology, using different wavelengths as information transmission carriers at the same time can further improve the bandwidth and flexibility of access. Wavelength switchable lasers can be equivalently realized by continuously tunable lasers, that is, in the continuous tunable laser. A series of wavelength grid points are selected as the reference in the tuning range, so that the continuously tunable laser can realize the function of the wavelength switchable laser. The current continuously tunable lasers based on mechanical tuning and thermal tuning are limited by mechanical motion and thermal stabilization time, so fast wavelength switching cannot be achieved. Current lasers based on the principle of current tuning, including adjustable distributed am...

AI Technical Summary

Problems solved by technology

[0003] The invention provides a semiconductor laser device and a manufacturing method, which solve the problems of slow wavelength switching time, large power loss, large structure size and high manufacturing cost of the existing devices and methods

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