CMOS image sensor and manufacturing method thereof

A technology of an image sensor and a manufacturing method, applied in the semiconductor field, can solve the problems of display function decline, pixel defects, imaging deterioration, etc., and achieve the improvement effect and the effect of preventing leakage current.

Inactive Publication Date: 2018-09-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the CMOS image sensor is also restricted by the manufacturing process. Pixel defects, such as white spots, will make the imaging worse, resulting in a decrease in display function.

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  • CMOS image sensor and manufacturing method thereof

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Embodiment Construction

[0041] The CMOS image sensor of the present invention and its manufacturing method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, and it should be understood that those skilled in the art can modify the present invention described here and still implement the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0042] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating...

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Abstract

The invention discloses a CMOS image sensor and a manufacturing method thereof. The manufacturing method of the CMOS image sensor includes the following steps: providing a front-end structure, whereina photodiode well region and an isolating ring surrounding the photodiode well region are formed on the front-end structure; forming a gate on the side of the photodiode well region on the isolatingring, wherein the gate is located at the junction of the photodiode well region and the isolating ring; forming a first side wall on the sidewall of the gate; forming a second side wall on the side, deviating from the gate, of the first side wall; and forming a floating diffusion region in the isolating ring by taking the first side wall and the second side wall as shields. Therefore, the side wall linewidth of the gate is greater, and the floating diffusion region is smaller and is far from the photodiode well region. Therefore, photoelectrons overflowing from the photodiode well region are neutralized by the isolating ring, leakage currents between the photodiode well region and the floating diffusion region are improved, and the quality of the CMOS image sensor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] Compared with a charge coupled device image sensor (Charge Coupled Device, CCD for short), a CMOS image sensor (Contact Image Sensor, CIS for short) has superior performance in terms of compatibility between its manufacturing process and the existing integrated circuit manufacturing process. CIS can integrate the drive circuit and pixels together, which simplifies the hardware design and greatly reduces the power consumption of the system; CIS can take out the electrical signal while collecting the optical signal, and can process the image information in real time, which is faster than the CCD image sensor ; Moreover, CIS also has the advantages of cheap price, large bandwidth, anti-fuzzy, flexible access and large fill factor. [0003] However, the CMOS image sensor is also restricted b...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14605H01L27/14643H01L27/14683
Inventor林杰黄海英
OwnerSEMICON MFG INT (SHANGHAI) CORP