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Flash memory device and manufacturing method thereof

A flash memory device and manufacturing method technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of slow reading and writing speed, high speed, etc., to avoid defects, reduce production costs, and save the effect of patterning process

Active Publication Date: 2022-04-05
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-volatile memory devices include NAND and NOR flash memory (Flash Memory) types, of which NAND flash memory has a large storage capacity, but the read and write speed is slow, while NOR flash memory is faster

Method used

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  • Flash memory device and manufacturing method thereof
  • Flash memory device and manufacturing method thereof
  • Flash memory device and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0040] Figure 1~6 It is a structural schematic diagram of each step of a manufacturing method of a flash memory device. Please refer to Figure 1 to Figure 6 As shown, the fabrication method of the flash memory device is as follows.

[0041] First, please refer to figure 1 As shown, a substrate 10 is provided, the substrate 10 includes a storage area 10A and a peripheral area 10B, a plurality of isolation structures 11 are formed in the substrate 10, and the upper surface of the isolation structures 11 is higher than the the upper surface of the substrate 10. A gate dielectric layer 12 is formed on the substrate 10 . Similarly, the upper surface of the isolation structure 11 is higher than the upper surface of the gate dielectric layer 12 . The material of the isolation structure 11 is preferably silicon oxide, and the material of the gate dielectric layer 12 is preferably silicon oxide.

[0042] Next, a floating gate material layer 13 is formed on the gate dielectric l...

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Abstract

The present invention provides a flash memory device and a manufacturing method thereof. A floating gate material layer in a storage area is etched to form a first groove in the floating gate material layer, and the floating gate material layer is planarized to form a first groove in the storage area. After the floating gate is formed in the region, the peripheral region retains a partial thickness of the floating gate material layer, and the remaining floating gate material layer is used as a mask to etch the isolation structure between the floating gates, which can save patterning. process, avoiding defects caused by photoresist patterning, and reducing production costs.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a flash memory device and a manufacturing method thereof. Background technique [0002] Generally speaking, semiconductor memory used to store data is divided into volatile memory and nonvolatile memory. Volatile memory is prone to data loss when power is interrupted, while nonvolatile memory The internal information of the memory can still be saved in time after being closed, and the non-volatile memory device has the characteristics of low cost and high density, so that the non-volatile memory device is widely used in various fields. Non-volatile memory devices include NAND and NOR flash memory (Flash Memory) types, of which NAND flash memory has a large storage capacity, but the read and write speed is slow, while NOR flash memory is Faster. [0003] As the size of the Nor Flash process continues to decrease, the requirements for the uniformity of the flo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H01L21/28H01L29/423
CPCH01L29/401H01L29/42324H01L29/42336H10B41/30
Inventor 薛广杰曹开玮周俊
Owner WUHAN XINXIN SEMICON MFG CO LTD
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