A floating gate type field effect transistor memory and its manufacturing method

Abstract

The invention relates to a floating gate type field effect transistor memory with fast erasing and writing of data and a manufacturing method thereof, belonging to the technical field of memory; in the prior art, it is not very obvious to improve the effect of memory erasing and writing; the invention provides A kind of memory, the memory uses a silicon wafer with a silicon oxide layer as a substrate, and the memory is successively from the substrate to a few-layer graphene as a floating gate layer, and hexagonal boron nitride as an insulating layer, as New two-dimensional materials (platinum disulfide and rhenium disulfide) for the channel layer, the memory also includes source and drain electrodes formed by evaporation on the channel layer; while realizing fast writing of data, it also realizes fast erasing of memory data.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a floating gate type field effect transistor memory with fast erasing and writing of data and a manufacturing method thereof. Background technique [0002] At present, with the advent of the big data era, memory is the key to ensuring that computers perform information processing and memory tasks. There are many types of memory, which can be roughly divided into two categories: volatile memory and non-volatile memory. Volatile memory is represented by dynamic random access memory (DRAM) and static random access memory (SRAM), which have extremely fast data writing However, after the system is powered off, the data in this type of memory cannot be stored for a long time (less than 1 ms). Therefore, this type of memory is mainly used in computer systems Memory; in contrast to the non-volatile memory represented by flash memory (FLASH), the data stored in it can be effectively saved...

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