Non-volatile memory access method, device, memory controller, device and medium

Abstract

The embodiment of the present invention discloses a non-volatile memory access method, device, memory controller, equipment, and storage medium. The method includes: obtaining an access request to the non-volatile memory; The target address corresponding to the address; according to the row remapping table and the original row address corresponding to the target address, determine the access row address, the row remapping table includes at least one row remapping relationship, and each row remapping relationship is each target row address The corresponding relationship between the swap row address and the target row address, the swap row address is the original row address in the non-volatile memory whose number of write operations is less than the write times threshold, and the access row address is the original row address corresponding to the target address or Exchange the row address; according to the access request, access the memory unit determined by the access row address and the target address. The embodiment of the present invention prolongs the service life of the nonvolatile memory, thereby improving the reliability of the memory system.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of memory, and in particular, to a nonvolatile memory access method, device, memory controller, device, and storage medium. Background technique [0002] In recent years, non-volatile memory (Non-Volatile Memory, NVM) technology has been rapidly developed, wherein non-volatile memory includes phase change memory (Phase Change Memory, PCM), magnetic random access memory (Magnetic Random Access Memory, MRAM), Resistive random access memory (Resistive Random Access Memory, RRAM) and 3D-Xpoint, etc. [0003] Compared with dynamic random access memory (Dynamic Random Access Memory, DRAM) memory, non-volatile memory device has the advantages of higher storage density, larger storage capacity and no need to refresh, but has the defect of shorter service life. It is generally considered that dynamic random access memory can be infinite (ie 10 16 times) write, that is, the threshold of write t...

AI Technical Summary

Problems solved by technology

Due to the uneven wear of the device, some memory cells will be more intensively read and written, and it is easy to reach the threshold of write times

When the number of write operations of this part of the memory unit reaches the write count threshold, the non-volatile memory will fail, which reduces the service life of the non-volatile memory, thereby affecting the reliability of the entire memory system

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