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Systems and methods for reducing resist model prediction errors

A resist and model technology, applied in the field of systems and methods for reducing resist model prediction errors, capable of solving size reduction, resist model inaccurate prediction, focus-dependent feature feature-dependent bias And other issues

Active Publication Date: 2020-08-04
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This resist model does not accurately predict the impact of focus-dependent features such as 1D line-space patterns in negative-tone developed (NTD) resists with sub-resolution assist features (SRAFs) close to the main features
[0009]The inability of currently used resist models to accurately predict the effect of focus-dependent features can be attributed to metrological measurements of resist profile (e.g. CDSEM measurements Feature-dependent bias in )
As feature sizes are expected to continue to decrease, the relative contribution of this bias introduced by the metrology setup will continue to grow, and thus introduce further modeling errors

Method used

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  • Systems and methods for reducing resist model prediction errors
  • Systems and methods for reducing resist model prediction errors
  • Systems and methods for reducing resist model prediction errors

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Embodiment Construction

[0060] As background for the example and go to figure 1 , illustrating an exemplary lithographic projection apparatus 10A. The main components are: radiation source 12A, which may be a deep ultraviolet excimer laser source or other types of light sources including extreme ultraviolet (EUV) sources; illumination optics, which define partial coherence (denoted as σ) and may include Radiation shaping optics 14A, 16Aa, and 16Ab of source 12A; a support configured to hold patterning device 18A; and projection optics 16Ac project an image of the patterning device pattern onto substrate plane 22A. An adjustable filter or aperture 20A at the pupil plane of the projection optics can define a range of beam angles impinging on the substrate plane 22A, where the largest possible angle defines the numerical aperture of the projection optics NA=sin(Θ max ). In an embodiment, the lithographic projection apparatus need not have the radiation source 12A itself.

[0061] Thus, in a lithograp...

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Abstract

Described herein is a method for calibrating a resist model. The method includes the steps of: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resiststructure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained bya metrology device. The method includes adjusting the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Application 62 / 609,776, filed December 22, 2017, and US Application 62 / 769,283, filed November 19, 2018, the entire contents of which are incorporated herein by reference. technical field [0003] The description herein relates to systems and methods for improving the prediction of resist profiles constructed from resist models. Specifically, the description herein provides techniques for reducing resist model prediction errors. Background technique [0004] A lithographic apparatus may be used, for example, to fabricate integrated circuits (ICs) or other devices. In this case, a patterning device (such as a mask) may contain or provide a pattern ("design layout") corresponding to an individual layer of the device, and this pattern may be transferred to a substrate (such as a silicon wafer) that has been coated with A layer of radiation-sensitive material ("resist") is present o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/705G03F7/70616G03F7/70666G06F30/13G01B11/24G01B11/25G03F7/706839
Inventor M·库伊曼D·M·里约S·F·乌伊斯特尔
Owner ASML NETHERLANDS BV