Capacitor and manufacturing method thereof

Abstract

The embodiment of the invention provides a capacitor and a manufacturing method thereof, which can be used for preparing a low-cost capacitor. The capacitor includes: a capacitor; at least one laminated structure, wherein the laminated structure comprises n conductive layers and m dielectric layers, the n conductive layers and the m dielectric layers form a structure in which the conducting layersand the dielectric layers are adjacent to each other, all odd conductive layers in the n conductive layers form at least one first step structure, all even conductive layers in the n conductive layers form at least one second step structure, and m and n are positive integers; at least one first external electrode electrically connected to a part of or all odd conductive layers in the n conductivelayers through the step surface of the first step structure; and at least one second external electrode electrically connected to part or all of the even number of conductive layers in the n conductive layers through the step surface of the second step structure.

Description

Technical field [0001] This application relates to the field of capacitors, and more specifically, to capacitors and methods of making them. Background technique [0002] Capacitors can play the role of bypassing, filtering, decoupling, etc. in the circuit, and are an indispensable part of ensuring the normal operation of the circuit. In order to increase the capacitance density of capacitors, silicon capacitors can usually be prepared based on a three-dimensional structure with a high aspect ratio. However, the high aspect ratio three-dimensional structure itself is difficult to process, and the production of conformal, uniform thickness and defect-free conductive layers and dielectric layers on this three-dimensional structure also requires an extremely high level of technology. How to prepare small-volume, high-capacity, and low-cost capacitors has become an urgent technical problem to be solved. Summary of the invention [0003] The embodiments of the present application pro...

AI Technical Summary

Problems solved by technology

However, the processing of a three-dimensional structure with a high aspect ratio is difficult, and the fabrication of a conformal, uniform thickness and defect-free conductive layer and dielectric layer on this three-dimensional structure also requires a very high level of technology.

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