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Method for application to plasma system and related plasma system

A technology of plasma and radio frequency power, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., and can solve problems such as amplification and differences in etching results

Active Publication Date: 2020-12-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the actual control process, there are still differences in etching results due to uncontrollable distribution parameters such as the wiring form of the lower electrode, which is further amplified especially in advanced processes.

Method used

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  • Method for application to plasma system and related plasma system
  • Method for application to plasma system and related plasma system
  • Method for application to plasma system and related plasma system

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Embodiment Construction

[0021] The following disclosure provides various implementations or illustrations, which can be used to achieve different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. It will be appreciated that these descriptions are merely examples and are not intended to limit the disclosure. For example, in the description below, forming a first feature on or over a second feature may include some embodiments wherein the first and second features are in direct contact with each other; and may also include In some embodiments, additional components are formed between the first and second features, such that the first and second features may not be in direct contact. In addition, this disclosure may reuse reference symbols and / or labels in various embodiments. Such repetition is for the sake of brevity and clarity, and does not in itself represent a relationship between the different embodiments and / or ...

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Abstract

The present invention provides a method for application to a plasma system. The plasma system comprises a chamber, a lower electrode disposed within the chamber, and a radio frequency source coupled to the lower electrode by a matching circuit, and the plasma system for processing a workpiece disposed on the lower electrode. The method comprises the following steps: starting the radio frequency source; increasing the radio frequency power of the radio frequency source, and generating output power at the lower electrode corresponding to the default position of the matching circuit; and when a first condition is satisfied, adjusting the radio frequency power in a first trend and adjusting the matching circuit in a second trend of increasing the ratio of the output power to the radio frequency power to satisfy a second condition.

Description

technical field [0001] The present invention relates to an operation method, specifically, a method applied to a plasma system and a related plasma system. Background technique [0002] The feature size of integrated circuits continues to decrease, and the required processing technology is becoming more and more stringent. One of the most important requirements is the consistency of etching products. During the process, the process of all chambers of the same type of machine Strict requirements are required for the consistency of results to avoid process risks caused by the consistency of each chamber. Therefore, strict process control is required between different chambers to achieve consistency of process results. However, in the actual control process, there are still differences in etching results caused by differences in uncontrollable distribution parameters such as the wiring form of the lower electrode, especially in advanced processes, this difference is further amp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32183H01J2237/3341H01J37/32H01L21/02H01J37/32532
Inventor 卫晶韦刚王鹏一
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD