Unlock instant, AI-driven research and patent intelligence for your innovation.

Method applied to plasma system and related plasma system

A plasma and radio frequency power technology, applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., which can solve problems such as amplification and differences in etching results

Active Publication Date: 2022-03-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual control process, there are still differences in etching results due to uncontrollable distribution parameters such as the wiring form of the lower electrode, which is further amplified especially in advanced processes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method applied to plasma system and related plasma system
  • Method applied to plasma system and related plasma system
  • Method applied to plasma system and related plasma system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The following disclosure provides various implementations or illustrations, which can be used to achieve different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. It will be appreciated that these descriptions are merely examples and are not intended to limit the disclosure. For example, in the description below, forming a first feature on or over a second feature may include some embodiments wherein the first and second features are in direct contact with each other; and may also include In some embodiments, additional components are formed between the first and second features, such that the first and second features may not be in direct contact. In addition, this disclosure may reuse reference symbols and / or labels in various embodiments. Such repetition is for the sake of brevity and clarity, and does not in itself represent a relationship between the different embodiments and / or ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method applied to a plasma system, the plasma system has a chamber, a lower electrode placed in the chamber, and a radio frequency source coupled to the lower electrode through a matching circuit, the plasma system is used for The workpiece placed on the lower electrode is processed. The method includes: starting the radio frequency source; increasing the radio frequency power of the radio frequency source, and corresponding to the default position of the matching circuit at the lower electrode to generate output power; and when the first condition is met, the first trend Adjusting the radio frequency power and adjusting the matching circuit with a second tendency to increase the ratio of the output power to the radio frequency power satisfies a second condition.

Description

technical field [0001] The present invention relates to an operation method, specifically, a method applied to a plasma system and a related plasma system. Background technique [0002] The feature size of integrated circuits continues to decrease, and the required processing technology is becoming more and more stringent. One of the most important requirements is the consistency of etching products. During the process, the process of all chambers of the same type of machine Strict requirements are required for the consistency of results to avoid process risks caused by the consistency of each chamber. Therefore, strict process control is required between different chambers to achieve consistency of process results. However, in the actual control process, there are still differences in etching results caused by differences in uncontrollable distribution parameters such as the wiring form of the lower electrode, especially in advanced processes, this difference is further amp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32183H01J2237/3341H01J37/32H01L21/02H01J37/32532
Inventor 卫晶韦刚王鹏一
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD